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STF18NM80
N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in D2PAK package
May 2012 Doc ID 15421 Rev 5 1/21
STB18NM80, STF18NM80,
STP18NM80, STW18NM80N-channel 800 V , 0.25 Ω , 17 A, MDmesh™ Power MOSFET
in D²P AK, TO-220FP , TO-220 and TO-247 packages
Datasheet — production data
Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Application Switching applications
DescriptionThese N-channel Power MOSFETs are
developed using STMicroelectronics’
revolutionary MDmesh™ technology, which
associates the multiple drain process with the
company's PowerMESH™ horizontal layout.
These devices offer extremely low on-resistance,
high dv/dt and excellent avalanche
characteristics. Utilizing ST’s proprietary strip
technique, these Power MOSFETs boast an
overall dynamic performance which is superior to
similar products on the market.
Limited only by maximum temperature allowed
Table 1. Device summary
Contents STB18NM80, STF18NM80, STP18NM80, STW18NM802/21 Doc ID 15421 Rev 5
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
STB18NM80, STF18NM80, STP18NM80, STW18NM80 Electrical ratings
Doc ID 15421 Rev 5 3/21
1 Electrical ratings
Table 2. Absolute maximum ratings Limited only by maximum temperature allowed Pulse width limited by safe operating area
Table 3. Thermal data
Table 4. Avalanche characteristics
Electrical characteristics STB18NM80, STF18NM80, STP18NM80, STW18NM80
4/21 Doc ID 15421 Rev 5
2 Electrical characteristics
(TCASE= 25 °C unless otherwise specified)
Table 5. On/off states
Table 6. Dynamic Pulsed: pulse duration = 300µs, duty cycle 1.5% Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
STB18NM80, STF18NM80, STP18NM80, STW18NM80 Electrical characteristics
Doc ID 15421 Rev 5 5/21
Table 7. Switching times
Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%
