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Partno	Mfg	Dc	Qty	Available	Descript
STE53NC50	ST	N/a	19	avai	N-CHANNEL 500V 0.070 OHM 53A ISOTOP POWERMESH II MOSFET

STE53NC50 ,N-CHANNEL 500V 0.070 OHM 53A ISOTOP POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)500 VDS GSV Drain- ..
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STE53NC50
N-CHANNEL 500V 0.070 OHM 53A ISOTOP POWERMESH II MOSFET
1/8May 2002
STE53NC50
N-CHANNEL 500V - 0.070Ω - 53A ISOTOP
PowerMesh™II MOSFET
(1) ISD≤ 53A, di/dt≤100 A/μs, VDD≤ 24V, Tj≤TjMAX TYPICAL RDS(on) = 0.07 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
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2/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
3/8
STE53NC50
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area Thermal Impedence
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Gate Charge vs Gate-source Voltage
Transconductance
Output Characteristics
Capacitance Variations
Static Drain-source On Resistance
Transfer Characteristics
5/8
STE53NC50
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
STE53NC50
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Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load

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