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Partno	Mfg	Dc	Qty	Available	Descript
STE180N10	NAISPanasonic	N/a	3000	avai	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN

STE180N10 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTE180N10®N - CHANNEL 100V - 5.5 mΩ - 180A - ISOTOPPOWER MOSFETTYPE V R IDSS DS(on) DSTE180N10 100 ..
STE26NA90 ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 900 VDS GSV Drain ..
STE53NA50 ,N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSTE53NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTE53NA50 500 V ..
STE53NC50 ,N-CHANNEL 500V 0.070 OHM 53A ISOTOP POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)500 VDS GSV Drain- ..
STE5588SVB ,STe5588STe5588DVD and DVB decoderfor video and audio with DVD audio supportDATA BRIEFDESCRIPTION Figure 1. ..
STEVAL-IPE006V2 , High end meter Demonstration board
SUD50N04-06H ,MOSFETsS-42058—Rev. B, 15-Nov-041SUD50N04-06HVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOT ..
SUD50N04-09H ,MOSFETsS-42058—Rev. D, 15-Nov-041SUD50N04-09HVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOT ..
SUD50N06-07L ,MOSFETsS-41133—Rev. A, 07-Jun-041SUD50N06-07LNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OT ..
SUD50N06-16 ,N-Channel 60-V (D-S) 175C MOSFETS-31921—Rev. A, 15-Sep-03 1SUD50N06-16New ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS O ..
SUD50P04-09L ,P-Channel 40-V (D-S) 175C MOSFETS-31261—Rev. A, 16-Jun-03 1SUD50P04-09LNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS ..
SUD50P04-09L-E3 , P-Channel 40 V (D-S), 175 °C MOSFET

STE180N10
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STE180N10
N - CHANNEL 100V - 5.5 mΩ - 180A - ISOTOP
POWER MOSFET TYPICAL RDS(on) = 5.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD

INDUSTRIAL APPLICATIONS: SMPS & UPS MOTOR CONTROL WELDING EQUIPMENT OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
February 1999
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area (1) ISD ≤180 Α, di/dτ ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STE180N10
2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STE180N10
3/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STE180N10
4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STE180N10
5/8
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STE180N10
6/8

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