STD95N2LH5 ,N-channel 25 V, 0.0038 Ohm, 80 AElectrical characteristics(T =25 °C unless otherwise specified)CASETable 4. StaticSymbol Parameter ..
STD95N4F3 ,N-channel 40 V, 5.0 mOhm, 80 A, DPAK STripFET(TM) III Power MOSFETAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage 40 VDSV Gate-source volta ..
STD95NH02L ,N-CHANNEL 24VAbsolute Maximum ratingsSymbol Parameter Value UnitV (1) Drain-source Voltage Rating 30 VspikeV Dra ..
STD95NH02L-1 ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: On/OffSymbol Parameter ..
STD95NH02LT4 ,N-CHANNEL 24VFeatures Figure 1: PackageTYPE V R IDSS DS(on) DSTD95NH02L 24 V < 0.005Ω 80(*) A
STD95N2LH5
N-channel 25 V, 0.0038 Ohm, 80 A
April 2010 Doc ID 13834 Rev 5 1/17
STD95N2LH5STP95N2LH5, STU95N2LH5N-channel 25 V , 0.0038 Ω , 80 A, DP AK, IP AK, TO-220 ripFET™ V Power MOSFET
Features RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses
Application Switching applications
DescriptionThis STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM (figure of merit).
Figure 1. Internal schematic diagram
Table 1. Device summary
Contents STD95N2LH5, STP95N2LH5, STU95N2LH52/17 Doc ID 13834 Rev 5
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STD95N2LH5, STP95N2LH5, STU95N2LH5 Electrical ratings
Doc ID 13834 Rev 5 3/17
1 Electrical ratings
Table 2. Absolute maximum ratings Limited by wire bonding Pulse width limited by safe operating area Starting Tj = 25°C, Id = 40 A, Vdd = 20 V
Table 3. Thermal resistance
Electrical characteristics STD95N2LH5, STP95N2LH5, STU95N2LH5
4/17 Doc ID 13834 Rev 5
2 Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4. Static
Table 5. Dynamic
STD95N2LH5, STP95N2LH5, STU95N2LH5 Electrical characteristics
Doc ID 13834 Rev 5 5/17
Table 6. Switching on/off (inductive load)
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Electrical characteristics STD95N2LH5, STP95N2LH5, STU95N2LH5
6/17 Doc ID 13834 Rev 5
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for DPAK, IPAK Figure 3. Thermal impedance for DPAK, IPAK
Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220
Figure 6. Output characteristics Figure 7. Transfer characteristics
STD95N2LH5, STP95N2LH5, STU95N2LH5 Electrical characteristics
Doc ID 13834 Rev 5 7/17
Figure 8. Normalized BVDSS vs temperature Figure 9. Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
vs temperature
Figure 13. Normalized on resistance vs
temperature
Electrical characteristics STD95N2LH5, STP95N2LH5, STU95N2LH5
8/17 Doc ID 13834 Rev 5
Figure 14. Source-drain diode forward
characteristics
STD95N2LH5, STP95N2LH5, STU95N2LH5 Test circuits
Doc ID 13834 Rev 5 9/17
Test circuits
Figure 15. Unclamped inductive load test
circuit
Figure 16. Unclamped inductive waveform
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
Figure 19. Test circuit for inductive load
switching and diode recovery times
Figure 20. Switching time waveform
