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Partno	Mfg	Dc	Qty	Available	Descript
STD7NS20T4	ST	N/a	3000	avai	N-CHANNEL 200V
STD7NS20T4	ST,ST	N/a	2500	avai	N-CHANNEL 200V

STD7NS20T4 ,N-CHANNEL 200VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD7NS20T4 ,N-CHANNEL 200VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 200 VDS GSV Drain- ..
STD815CP40 ,Complementary transistor pair in a single packageAbsolute maximum ratingsValueSymbol Parameter UnitNPN PNPV Collector-base voltage (I = 0) 700 500 V ..
STD815CP40 ,Complementary transistor pair in a single packageElectrical characteristicsSymbol Parameter Test conditions Min. Typ. Max. UnitFor NPN:V = 700 V 1 m ..
STD83003 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSTD83003®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ REVERSE PINS OUT Vs STANDARD IPAK(TO-251) ..
STD85N3LH5 ,N-channel 30 V, 0.0042 Ohm , 80 A, DPAK, TO-220, IPAKElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. StaticSymbol Paramete ..
SUD25N06-45L ,N-Channel Enhancement-Mode MOSFETs, Logic Level FaxBack 408-970-5600S-57253—Rev. E, 24-Feb-982-1SUD25N06-45LVishay Siliconix

STD7NS20T4
N-CHANNEL 200V
1/8
PRELIMINARY DATA
June 2003
STD7NS20
STD7NS20-1
N-CHANNEL 200V- 0.35Ω - 7A DPAK/ IPAK
MESH OVERLAY™ MOSFET TYPICAL RDS(on)= 0.35Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES ADD SUFFIX “T4” FOR ORDERINGIN TAPE&
REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced familyof power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makesit suitablein coverters for
lighting applications.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limitedby safe operating area
(1) ISD≤ 7A, di/dt≤300 A/μs, VDD≤ V(BR)DSS,Tj≤TjMAX
STD7NS20/ STD7NS20-1
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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
3/8
STD7NS20/ STD7NS20-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
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Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
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STD7NS20/ STD7NS20-1
STD7NS20/ STD7NS20-1
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