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Partno	Mfg	Dc	Qty	Available	Descript
STD7NM80	ST	N/a	369	avai	N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in DPAK package
STF7NM80	ST	N/a	850	avai	N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in TO-220FP package

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STD7NM80-STF7NM80
N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in DPAK package
October 2009 Doc ID 12573 Rev 3 1/17
STD7NM80, STD7NM80-1STF7NM80, STP7NM80
N-channel 800 V , 0.95 Ω, 6.5 A TO-220, TO-220FP , IP AK, DP AK
MDmesh™ Power MOSFET
Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Application Switching applications
Description
MDmesh™ technology applies the benefits of the
multiple drain process to STMicroelectronics’
well-known PowerMESH™ horizontal layout
structure. The resulting product offers low on-
resistance, high dv/dt capability and excellent
avalanche characteristics.
Figure 1. Internal schematic diagram

Table 1. Device summary
Contents STD7NM80-1, STD7NM80, STF7NM80, STP7NM80
2/17 Doc ID 12573 Rev 3
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 Electrical ratings
Doc ID 12573 Rev 3 3/17
1 Electrical ratings
Table 2. Absolute maximum ratings Limited only by maximum temperature allowed Pulse width limited by safe operating area
Table 3. Thermal data
Table 4. Avalanche characteristics
Electrical characteristics STD7NM80-1, STD7NM80, STF7NM80, STP7NM80
4/17 Doc ID 12573 Rev 3
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Table 6. Dynamic Pulsed: pulse duration = 300µs, duty cycle 1.5%
STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 Electrical characteristics
Doc ID 12573 Rev 3 5/17
Table 7. Switching times
Table 8. Source drain diode Pulsed: pulse duration = 300 µs, duty cycle 1.5%