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STD7NM60N-STF7NM60N-STU7NM60N
N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in DPAK package
November 2010 Doc ID 16472 Rev 4 1/17
STD7NM60N, STF7NM60N
STP7NM60N, STU7NM60NN-channel 600 V , 5 A, 0.84 Ω , DP AK, TO-220FP , TO-220, IP AK
second generation MDmesh™ Power MOSFET
Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
ApplicationSwitching applications
DescriptionThese devices are N-channel Power MOSFETs
realized using the second generation of
MDmeshTM technology. It applies the benefits of
the multiple drain process to STMicroelectronics’
well-known PowerMESH™ horizontal layout
structure. The resulting product offers improved
on-resistance, low gate charge, high dv/dt
capability and excellent avalanche characteristics.
Table 1. Device summary
Contents STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N2/17 Doc ID 16472 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Electrical ratings
Doc ID 16472 Rev 4 3/17
1 Electrical ratings
Table 2. Absolute maximum ratings Limited only by maximum temperature allowed Pulse width limited by safe operating area ISD ≤ 5 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS
Table 3. Thermal data
Table 4. Thermal data
Electrical characteristics STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
4/17 Doc ID 16472 Rev 4
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Table 6. Dynamic Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Electrical characteristics
Doc ID 16472 Rev 4 5/17
Table 7. Switching times
Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%