STD7NK40ZT4 ,N-CHANNEL 400VSTP7NK40Z - STP7NK40ZFPSTD7NK40Z - STD7NK40Z-1N-CHANNEL 400V-0.85Ω-5.4A TO-220/TO-220FP/DPAK/IPAKZe ..
STD7NK40ZT4 ,N-CHANNEL 400VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTD7NK40ZSTP7NK40Z STP7NK40ZFPSTD7NK40Z-1V Drain ..
STD7NK40ZT4 ,N-CHANNEL 400VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STD7NM60N ,N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in DPAK packageapplicationsFigure 1. Internal schematic diagramDescription$ These devices are N-channel Power MO ..
STD7NM80 ,N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in DPAK packageElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 5. On/off statesSymbol ..
STD7NS20 ,N-CHANNEL 200VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)200 VDS GSV Drain- ..
SUD23N06-31 , N-Channel 60 V (D-S) 175 °C MOSFET
SUD23N06-31L ,N-Channel 60-V (D-S) 175C MOSFET, Logic LevelS-03536—Rev. A, 24-Mar-031SUD23N06-31LVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOT ..
SUD25N04-25 ,N-Channel Enhancement-Mode MOSFETS-04558—Rev. B, 27-Aug-01 2-1SUD25N04-25Vishay Siliconix ..
SUD25N06-45L ,N-Channel Enhancement-Mode MOSFETs, Logic Level FaxBack 408-970-5600S-57253—Rev. E, 24-Feb-982-1SUD25N06-45LVishay Siliconix
STD7NK40ZT4
N-CHANNEL 400V
1/13September 2002
STP7NK40Z - STP7NK40ZFP
STD7NK40Z - STD7NK40Z-1N-CHANNEL 400V-0.85Ω-5.4A TO-220/TO-220FP/DPAK/IPAK
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1
ABSOLUTE MAXIMUM RATINGS ) Pulse width limited by safe operating area
(1) ISD ≤5.4A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
3/13
STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1Output Characteristics
Thermal Impedance For TO-220/DPAK/IPAK
Safe Operating Area For TO-220FPSafe Operating Area For TO-220/DPAK/IPAK
5/13
STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.
Capacitance VariationsGate Charge vs Gate-source Voltage
Static Drain-source On ResistanceTransconductance
STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1
Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature
Maximum Avalanche Energy vs Temperature
7/13
STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test CircuitFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
