STD7NB20 ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 200 VDS GSV Drain ..
STD7NB20T4 ,N-CHANNEL 200V 0.3 OHM 7A DPAK/IPAK POWERMESH MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD7NB20T4 ,N-CHANNEL 200V 0.3 OHM 7A DPAK/IPAK POWERMESH MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 200 VDS GSV Drain ..
STD7NK40Z ,N-CHANNEL 400VSTP7NK40Z - STP7NK40ZFPSTD7NK40Z - STD7NK40Z-1N-CHANNEL 400V-0.85Ω-5.4A TO-220/TO-220FP/DPAK/IPAKZe ..
STD7NK40Z-1 ,N-CHANNEL 400VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTD7NK40ZSTP7NK40Z STP7NK40ZFPSTD7NK40Z-1V Drain ..
STD7NK40ZT4 ,N-CHANNEL 400VSTP7NK40Z - STP7NK40ZFPSTD7NK40Z - STD7NK40Z-1N-CHANNEL 400V-0.85Ω-5.4A TO-220/TO-220FP/DPAK/IPAKZe ..
SUD23N06-31 , N-Channel 60 V (D-S) 175 °C MOSFET
SUD23N06-31L ,N-Channel 60-V (D-S) 175C MOSFET, Logic LevelS-03536—Rev. A, 24-Mar-031SUD23N06-31LVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOT ..
SUD25N04-25 ,N-Channel Enhancement-Mode MOSFETS-04558—Rev. B, 27-Aug-01 2-1SUD25N04-25Vishay Siliconix ..
SUD25N06-45L ,N-Channel Enhancement-Mode MOSFETs, Logic Level FaxBack 408-970-5600S-57253—Rev. E, 24-Feb-982-1SUD25N06-45LVishay Siliconix
STD7NB20
N-CHANNEL 200V 0.3 OHM 7A DPAK/IPAK POWERMESH MOSFET
1/10July 2002
STD7NB20
STD7NB20-1N-CHANNEL 200V - 0.3Ω - 7A DPAK/IPAK
PowerMESH™ MOSFET TYPICAL RDS(on) = 0.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTIONUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS SWITH MODE POWER SUPPLIES (SMPS) DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1) ISD≤ 7A, di/dt≤200 A/μs, VDD≤ V(BR)DSS, Tj≤TjMAX
STD7NB20 / STD7NB20-1
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/10
STD7NB20 / STD7NB20-1
Thermal Impedance
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area
STD7NB20 / STD7NB20-1
Capacitance Variations
Transconductance Static Drain-source On Resistance
Transfer CharacteristicsOutput Characteristics
Gate Charge vs Gate-source Voltage
5/10
STD7NB20 / STD7NB20-1
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
