STD790A ,MEDIUM CURRENT HIGH PERFORMANCE LOW VOLTAGE PNP TRANSISTORAPPLICATIONS (Suffix "T4")■ SWITCHING REGULATOR ..
STD790AT4 ,MEDIUM CURRENT HIGH PERFORMANCE LOW VOLTAGE PNP TRANSISTORSTD790A®MEDIUM CURRENT, HIGH PERFORMANCE,LOW VOLTAGE PNP TRANSISTORType MarkingSTD790A D790A■ VERY ..
STD7NB20 ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 200 VDS GSV Drain ..
STD7NB20T4 ,N-CHANNEL 200V 0.3 OHM 7A DPAK/IPAK POWERMESH MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD7NB20T4 ,N-CHANNEL 200V 0.3 OHM 7A DPAK/IPAK POWERMESH MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 200 VDS GSV Drain ..
STD7NK40Z ,N-CHANNEL 400VSTP7NK40Z - STP7NK40ZFPSTD7NK40Z - STD7NK40Z-1N-CHANNEL 400V-0.85Ω-5.4A TO-220/TO-220FP/DPAK/IPAKZe ..
SUD19N20-90 ,N-Channel 200-V (D-S) 175C MOSFETS-05233—Rev. A, 17-Dec-01 1SUD19N20-90New ProductVishay Siliconix ..
SUD23N06-31 , N-Channel 60 V (D-S) 175 °C MOSFET
SUD23N06-31L ,N-Channel 60-V (D-S) 175C MOSFET, Logic LevelS-03536—Rev. A, 24-Mar-031SUD23N06-31LVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOT ..
SUD25N04-25 ,N-Channel Enhancement-Mode MOSFETS-04558—Rev. B, 27-Aug-01 2-1SUD25N04-25Vishay Siliconix ..
SUD25N06-45L ,N-Channel Enhancement-Mode MOSFETs, Logic Level FaxBack 408-970-5600S-57253—Rev. E, 24-Feb-982-1SUD25N06-45LVishay Siliconix
STD790A-STD790AT4
MEDIUM CURRENT HIGH PERFORMANCE LOW VOLTAGE PNP TRANSISTOR
STD790AMEDIUM CURRENT, HIGH PERFORMANCE,
LOW VOLTAGE PNP TRANSISTOR VERY LOW COLLECTOR TO EMITTER
SATURATION VOLTAGE DC CURRENT GAIN, hFE > 100 3 A CONTINUOUS COLLECTOR CURRENT 60 V BREAKDOWN VOLTAGE (V(BR)CER) SURFACE MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(Suffix "T4")
APPLICATIONS SWITCHING REGULATOR IN BATTERY
CHARGER APPLICATIONS SUITABLE FOR AUTOMOTIVE
APPLICATIONS (V(BR)CER > 60V) VOLTAGE REGULATION IN BIAS SUPPLY
CIRCUITS HEAVY LOAD DRIVER
DESCRIPTION The device is manufactured in low voltage PNP
Planar Technology by using a "Base Island"
layout.
The resulting Transistor shows exceptional high
gain performance coupled with very low
saturation voltage.
March 2003
ABSOLUTE MAXIMUM RATINGS1/6
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle ≤ 1.5 %
STD790A2/6
Switching Times Resistive Load Switching Times Resistive Load
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
DC Current Gain DC Current Gain
STD790A3/6
Figure 1: Resistive Load Switching Test Circuit.
STD790A4/6
STD790A5/6
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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STD790A6/6
