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STD75N3LLH6
N-channel 30 V, 0.0042 Ohm, 75 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
July 2011 Doc ID 15978 Rev 4 1/21
STD75N3LLH6, STP75N3LLH6
STU75N3LLH6, STU75N3LLH6-SN-channel 30 V , 0.0042 Ω , 75 A, DP AK, TO-220, IP AK, Short IP AK ripFET™ VI DeepGA TE™ Power MOSFET
Features RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses
ApplicationSwitching applications
DescriptionThis N-Channel Power MOSFET product utilizes
the 6th generation of design rules of ST’s
proprietary STripFET™ technology, with a new
gate structure.The resulting Power MOSFET
exhibits the lowest RDS(on) in all packages.
Figure 1. Internal schematic diagram
Table 1. Device summary
Contents STD/P/U75N3LLH6, STU75N3LLH6-S2/21 Doc ID 15978 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
STD/P/U75N3LLH6, STU75N3LLH6-S Electrical ratings
Doc ID 15978 Rev 4 3/21
1 Electrical ratings
Table 2. Absolute maximum ratings The value is rated according to Rthj-case Pulse width limited by safe operating area
Table 3. Thermal data When mounted on FR-4 board of 1in², 2oz Cu. t < 10 sec
Electrical characteristics STD/P/U75N3LLH6, STU75N3LLH6-S
4/21 Doc ID 15978 Rev 4
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Table 5. Dynamic
STD/P/U75N3LLH6, STU75N3LLH6-S Electrical characteristics
Doc ID 15978 Rev 4 5/21
Table 6. Switching times
Table 7. Source drain diode Pulse width limited by safe operating area. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
