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STD70N10F4 ,N-channel 100 V, 0.015 Ohm, 60 A, STripFET(TM) DeepGATE(TM) Power MOSFET in DPAKAbsolute maximum ratingsValueSymbol Parameter UnitTO-220, TO-247, DPAKD²PAKV Drain-source voltage ( ..
STD70NH02L ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED) CASETable 5: OFFSymbol Parameter ..
STD70NH02LT4 ,N-CHANNEL 24VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVDrain-source Voltage Rating 30 Vspike(1)V Drain ..
STD70NS04ZL ,N-channel 40V, DPAK, Power MOSFETsElectrical characteristics(T =25 °C unless otherwise specified)CASETable 5. On/off statesSymbol Par ..
STD75N3LLH6 ,N-channel 30 V, 0.0042 Ohm, 75 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFETElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. On/off statesSymbol Para ..
STD790A ,MEDIUM CURRENT HIGH PERFORMANCE LOW VOLTAGE PNP TRANSISTORAPPLICATIONS (Suffix "T4")■ SWITCHING REGULATOR ..
SUD15N06-90L ,N-Channel 60-V (D-S) 175C MOSFET, Logic Level FaxBack 408-970-5600S-49634—Rev. D, 20-Sep-992-1SUD15N06-90LVishay Siliconix
STD70N10F4-STW70N10F4
N-channel 100 V, 0.015 Ohm, 60 A, STripFET(TM) DeepGATE(TM) Power MOSFET in DPAK
October 2009 Doc ID 15207 Rev 3 1/18
STB70N10F4, STD70N10F4
STP70N10F4, STW70N10F4N-channel 100 V , 0.015 Ω , 60 A, ST ripFET™ DeepGA TE™
Power MOSFET in TO-220, DP AK, TO-247, D2 PAK
Features Exceptional dv/dt capability Extremely low on-resistance RDS(on) 100% avalanche tested
Application Switching applications
DescriptionThis STripFET™ DeepGATE™ Power MOSFET
technology is among the latest improvements,
which have been especially tailored to minimize
on-state resistance, with a new gate structure,
providing superior switching performance.
Figure 1. Internal schematic diagram
Table 1. Device summary
Contents STB/D/P/W70N10F42/18 Doc ID 15207 Rev 3
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
STB/D/P/W70N10F4 Electrical ratings
Doc ID 15207 Rev 3 3/18
1 Electrical ratings
Table 2. Absolute maximum ratings Pulse width limited by safe operating area Starting Tj = 25 °C, ID= 32.5 A, VDD= 45 V
Table 3. Thermal data When mounted on FR-4 board of 1 inch², 2 oz Cu
Electrical characteristics STB/D/P/W70N10F4
4/18 Doc ID 15207 Rev 3
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Table 5. Dynamic
Table 6. Switching times
STB/D/P/W70N10F4 Electrical characteristics
Doc ID 15207 Rev 3 5/18
Table 7. Source drain diode Pulse width limited by safe operating area. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%