STD6NK50Z ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP6NK50ZSTF6NK50ZSTD6NK50ZV Drain-source Voltag ..
STD6NK50ZT4 ,N-CHANNEL 500VAPPLICATIONS
STD6NK50Z-STD6NK50ZT4-STP6NK50Z
N-CHANNEL 500V
1/12April 2004
STP6NK50Z- STF6NK50Z
STD6NK50ZN-CHANNEL 500V- 0.93Ω - 5.6A TO-220/TO-220FP/DPAK
Zener-Protected SuperMESH™ MOSFET TYPICAL RDS(on)= 0.93Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDER CODES
STP6NK50Z- STF6NK50Z- STD6NK50Z2/12
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤ 5.6A, di/dt ≤ 200 A/µs,VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/12
STP6NK50Z- STF6NK50Z- STD6NK50Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300µs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP6NK50Z- STF6NK50Z- STD6NK50Z4/12
Thermal Impedance for DPAKSafe Operating Area for DPAK
Thermal Impedance for TO-220FPSafe Operating Area for TO-220FP
Thermal Impedance for TO-220Safe Operating Area for TO-220
5/12
STP6NK50Z- STF6NK50Z- STD6NK50Z
Transconductance
Transfer CharacteristicsOutput Characteristics
Capacitance VariationsGate Chargevs Gate-source Voltage
Static Drain-source On Resistance
STP6NK50Z- STF6NK50Z- STD6NK50Z6/12
Maximum Avalanche Energyvs Temperature
NormalizedSource-drain
Normalized On Resistancevs TemperatureNormalized Gate Thereshold Voltagevs Temp.
