STD6NC40 ,N-CHANNEL 400V 0.75 OHM 5A DPAK/IPAK POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 400 VDS GSV Drain ..
STD6NF10 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)100 VDS GSV Drain- ..
STD6NF10T4 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)100 VDS GSV Drain- ..
STD6NF10-T4 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD6NK50Z ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP6NK50ZSTF6NK50ZSTD6NK50ZV Drain-source Voltag ..
STD6NK50ZT4 ,N-CHANNEL 500VAPPLICATIONS
STD6NC40
N-CHANNEL 400V 0.75 OHM 5A DPAK/IPAK POWERMESH II MOSFET
1/9March 2001
STD6NC40N-CHANNEL 400V - 0.75Ω - 5A - DPAK / IPAK
PowerMesh™II MOSFET
(1)ISD ≤5A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. TYPICAL RDS(on) = 0.75Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL ADD SUFFIX “-1” FOR ORDERING IN IPAK
DESCRIPTIONThe PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS SWITH MODE LOW POWER SUPPLIES
(SMPS) CFL
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
STD6NC40
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STD6NC40
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal ImpedenceSafe Operating Area
STD6NC40
Gate Charge vs Gate-source Voltage
Transconductance Static Drain-source On Resistance
Transfer CharacteristicsOutput Characteristics
5/9
STD6NC40
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STD6NC40
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
