STD6N62K3 ,N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in DPAKElectrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STD6NC40 ,N-CHANNEL 400V 0.75 OHM 5A DPAK/IPAK POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 400 VDS GSV Drain ..
STD6NF10 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)100 VDS GSV Drain- ..
STD6NF10T4 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)100 VDS GSV Drain- ..
STD6NF10-T4 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD6NK50Z ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP6NK50ZSTF6NK50ZSTD6NK50ZV Drain-source Voltag ..
SUD06N10-225L ,N-Channel 100-V (D-S) 175C MOSFET FaxBack 408-970-5600S–01584—Rev. A, 17-Jul-00 1SUD06N10-225LNew ProductVishay Siliconix ..
SUD08P06-155L-E3 , P-Channel 60-V (D-S), 175 °C MOSFET
SUD08P06-155L-E3 , P-Channel 60-V (D-S), 175 °C MOSFET
SUD08P06-155L-E3 , P-Channel 60-V (D-S), 175 °C MOSFET
SUD10P06-280L ,P-Channel 60-V (D-S), 175 grades C MOSFET, Logic LevelS-20349—Rev. F, 18-Apr-022-1SUD/SUU10P06-280LVishay SiliconixSPECIFICATIONS (T =25C UNLESS OTHERWI ..
SUD10P06-280L ,P-Channel 60-V (D-S), 175 grades C MOSFET, Logic LevelS-20349—Rev. F, 18-Apr-022-3C – Capacitance (pF) g – Transconductance (S) I – Drain Current (A)f ..
STD6N62K3
N-channel 620 V, 0.95 Ohm typ., 5.5 A SuperMESH3(TM) Power MOSFET in D2PAK package
December 2011 Doc ID 022605 Rev 1 1/19
STB6N62K3
STD6N62K3N-channel 620 V , 0.95 Ω , 5.5 A SuperMESH3™ Power MOSFET
in D²P AK, DPAK
Features 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery
characteristics Zener-protected
Applications Switching applications
DescriptionThese SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
Table 1. Device summary
Contents STB6N62K3, STD6N62K32/19 Doc ID 022605 Rev 1
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
STB6N62K3, STD6N62K3 Electrical ratings
Doc ID 022605 Rev 1 3/19
1 Electrical ratings
Table 2. Absolute maximum ratings Pulse width limited by safe operating area. Pulse width limited by Tj max. Starting Tj = 25 °C, ID = IAR, VDD = 50 V. ISD ≤ 5.5 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS.
Table 3. Thermal data When mounted on 1inch² FR-4 board, 2 oz Cu.
Electrical characteristics STB6N62K3, STD6N62K3
4/19 Doc ID 022605 Rev 1
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Table 5. Dynamic Is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS Is defined as a constant equivalent capacitance giving the same storage energy as Coss when VDS
increases from 0 to 80% VDSS
STB6N62K3, STD6N62K3 Electrical characteristics
Doc ID 022605 Rev 1 5/19
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 6. Switching times
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 8. Gate-source Zener diode
