STD616A ,HIGH VOLTAGE NPN POWER TRANSISTORSTD616A®HIGH VOLTAGE NPN POWER TRANSISTOR■ REVERSE PINS OUT Vs STANDARD IPAK(TO-251) / DPAK (TO-252 ..
STD616A-1 ,HIGH VOLTAGE NPN POWER TRANSISTORSTD616A®HIGH VOLTAGE NPN POWER TRANSISTOR■ REVERSE PINS OUT Vs STANDARD IPAK(TO-251) / DPAK (TO-252 ..
STD616AT4 ,HIGH VOLTAGE NPN POWER TRANSISTORSTD616A®HIGH VOLTAGE NPN POWER TRANSISTOR■ REVERSE PINS OUT Vs STANDARD IPAK(TO-251) / DPAK (TO-252 ..
STD616A-T4 ,HIGH VOLTAGE NPN POWER TRANSISTORSTD616A®HIGH VOLTAGE NPN POWER TRANSISTOR■ REVERSE PINS OUT Vs STANDARD IPAK(TO-251) / DPAK (TO-252 ..
STD6N10 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTD6N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD6N10 100 V < 0.45 Ω ..
STD6N62K3 ,N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in DPAKElectrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
SUD06N10-225L ,N-Channel 100-V (D-S) 175C MOSFET FaxBack 408-970-5600S–01584—Rev. A, 17-Jul-00 1SUD06N10-225LNew ProductVishay Siliconix ..
SUD08P06-155L-E3 , P-Channel 60-V (D-S), 175 °C MOSFET
SUD08P06-155L-E3 , P-Channel 60-V (D-S), 175 °C MOSFET
SUD08P06-155L-E3 , P-Channel 60-V (D-S), 175 °C MOSFET
SUD10P06-280L ,P-Channel 60-V (D-S), 175 grades C MOSFET, Logic LevelS-20349—Rev. F, 18-Apr-022-1SUD/SUU10P06-280LVishay SiliconixSPECIFICATIONS (T =25C UNLESS OTHERWI ..
SUD10P06-280L ,P-Channel 60-V (D-S), 175 grades C MOSFET, Logic LevelS-20349—Rev. F, 18-Apr-022-3C – Capacitance (pF) g – Transconductance (S) I – Drain Current (A)f ..
STD616A
HIGH VOLTAGE NPN POWER TRANSISTOR
STD616AHIGH VOLTAGE NPN POWER TRANSISTOR REVERSE PINS OUT Vs STANDARD IPAK
(TO-251) / DPAK (TO-252) PACKAGES HIGH VOLTAGE CAPABILITY HIGH DC CURRENT GAIN THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4") MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
APPLICATIONS: SWITCH MODE POWER SUPPLIES
DESCRIPTION The STD616A is manufactured using High
Voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage withstand
capability.
September 2001
ABSOLUTE MAXIMUM RATINGS1/6
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
STD616A2/6
Safe Operating Area
Reverse Biased SOA
Derating Curve
STD616A3/6
STD616A4/6
STD616A5/6
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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STD616A6/6
