STD60NH03L-T4 ,N-CHANNEL 30VSTD60NH03LN-CHANNEL 30V - 0.0075 Ω - 60A DPAK/IPAKSTripFET™ III POWER MOSFETTYPE V R IDSS DS(on) DS ..
STD616A ,HIGH VOLTAGE NPN POWER TRANSISTORSTD616A®HIGH VOLTAGE NPN POWER TRANSISTOR■ REVERSE PINS OUT Vs STANDARD IPAK(TO-251) / DPAK (TO-252 ..
STD616A-1 ,HIGH VOLTAGE NPN POWER TRANSISTORSTD616A®HIGH VOLTAGE NPN POWER TRANSISTOR■ REVERSE PINS OUT Vs STANDARD IPAK(TO-251) / DPAK (TO-252 ..
STD616AT4 ,HIGH VOLTAGE NPN POWER TRANSISTORSTD616A®HIGH VOLTAGE NPN POWER TRANSISTOR■ REVERSE PINS OUT Vs STANDARD IPAK(TO-251) / DPAK (TO-252 ..
STD616A-T4 ,HIGH VOLTAGE NPN POWER TRANSISTORSTD616A®HIGH VOLTAGE NPN POWER TRANSISTOR■ REVERSE PINS OUT Vs STANDARD IPAK(TO-251) / DPAK (TO-252 ..
STD6N10 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTD6N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD6N10 100 V < 0.45 Ω ..
SUB85N10-10 ,N-Channel 100-V (D-S) 175C MOSFET FaxBack 408-970-5600S-00172—Rev. A, 14-Feb-002-1SUP/SUB85N10-10New ProductVishay Siliconix ..
SUD06N10-225L ,N-Channel 100-V (D-S) 175C MOSFET FaxBack 408-970-5600S–01584—Rev. A, 17-Jul-00 1SUD06N10-225LNew ProductVishay Siliconix ..
SUD08P06-155L-E3 , P-Channel 60-V (D-S), 175 °C MOSFET
SUD08P06-155L-E3 , P-Channel 60-V (D-S), 175 °C MOSFET
SUD08P06-155L-E3 , P-Channel 60-V (D-S), 175 °C MOSFET
SUD10P06-280L ,P-Channel 60-V (D-S), 175 grades C MOSFET, Logic LevelS-20349—Rev. F, 18-Apr-022-1SUD/SUU10P06-280LVishay SiliconixSPECIFICATIONS (T =25C UNLESS OTHERWI ..
STD60NH03L-STD60NH03LT4-STD60NH03L-T4
N-CHANNEL 30V
STD60NH03LN-CHANNEL 30V - 0.0075 Ω - 60A DPAK/IPAK
STripFET™ III POWER MOSFET TYPICAL RDS(on) = 0.0075 Ω @ 10 V TYPICAL RDS(on) = 0.009 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTIONThe STD60NH03L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
Ordering Information
ABSOLUTE MAXIMUM RATINGS
INTERNAL SCHEMATIC DIAGRAM
STD60NH03L
THERMAL DATA(#) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu.
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF
ON (4)
DYNAMIC
STD60NH03L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE(1) Pulse width limited by safe operating area (3) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(2) Starting Tj = 25 oC, ID = 30A, VDD = 20V (4) Gate charge for synchronous operation . See Appendix A
.
ELECTRICAL CHARACTERISTICS (continued)Safe Operating Area Thermal Impedance
STD60NH03LGate Charge vs Gate-source Voltage Capacitance Variations
STD60NH03L .
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
