STD60NF55LAT4 ,N-channel 55 V, 0.012 Ohm, 60 A DPAK STripFET(TM) II Power MOSFETElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. On/off statesSymbol Para ..
STD60NF55LT4 ,N-CHANNEL 55V 0.012 OHM 60A DPAK STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD60NH03L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD60NH03LT4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)30 VDS GSV Drain-g ..
STD60NH03L-T4 ,N-CHANNEL 30VSTD60NH03LN-CHANNEL 30V - 0.0075 Ω - 60A DPAK/IPAKSTripFET™ III POWER MOSFETTYPE V R IDSS DS(on) DS ..
STD616A ,HIGH VOLTAGE NPN POWER TRANSISTORSTD616A®HIGH VOLTAGE NPN POWER TRANSISTOR■ REVERSE PINS OUT Vs STANDARD IPAK(TO-251) / DPAK (TO-252 ..
SUB85N04-04 ,N-Channel 40-V (D-S) 175C MOSFETS-41261—Rev. C, 05-Jul-041SUP/SUB85N04-04Vishay SiliconixSPECIFICATIONS (T =25C UNLESS OTHERWISE N ..
SUB85N08-08 ,N-Channel 75-V (D-S) 175C MOSFETSUP/SUB85N08-08New ProductVishay SiliconixN-Channel 75-V (D-S) 175C MOSFET
STD60NF55LAT4
N-channel 55 V, 0.012 Ohm, 60 A DPAK STripFET(TM) II Power MOSFET
October 2011 ID 11226 Rev 3 1/16
STD60NF55LAN-channel 55 V , 0.012 Ω , 60 A DP AK ripFET™ II Power MOSFET
Features Low threshold drive
Applications Switching application Automotive
DescriptionThis Power MOSFET has been developed using
STMicroelectronics’ unique STripFET process,
which is specifically designed to minimize input
capacitance and gate charge. This renders the
device suitable for use as primary switch in
advanced high-efficiency isolated DC-DC
converters for telecom and computer applications,
and applications with low gate charge driving
requirements.
Table 1. Device summary
Contents STD60NF55LA2/16 ID 11226 Rev 3
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STD60NF55LA Electrical ratings
ID 11226 Rev 3 3/16
1 Electrical ratings
Table 2. Absolute maximum ratings Pulse width limited by safe operating area. ISD ≤ 40A, di/dt ≤ 350A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Starting Tj = 25 °C, ID = 17.5 A, VDD =24 V
Table 3. Thermal data
Electrical characteristics STD60NF55LA
4/16 ID 11226 Rev 3
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Table 5. Dynamic Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
STD60NF55LA Electrical characteristics
ID 11226 Rev 3 5/16
Table 6. Source drain diode Pulse width limited by safe operating area. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Electrical characteristics STD60NF55LA
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characterisics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance
STD60NF55LA Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Electrical characteristics STD60NF55LA
8/16 ID 11226 Rev 3
The previous curve gives the safe operating area for unclamped inductive loads, single
pulse or repetitive, under the following conditions:
PD(AVE) = 0.5* (1.3*BVDSS*IAV)
EAS(AR) = PD(AVE)*tAV
Where:
IAV is the allowable current in avalanche,
PD(AVE) is the average power dissipation in avalanche (single pulse)
tAV is the time in avalanche. o derate above 25°C, at fixed IAV , the following equation must be applied:
IAV=2*(Tjmax-TCASE) / (1.3*BVDSS*Zth)
Where:
Zth= K*Rth is the value coming from normalized thermal response at fixed pulse width equal
to TAV
Figure 13. Allowable IAV vs time in avalanche
