STD60N55F3 ,N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in DPAK packageElectrical characteristics(T = 25 °C unless otherwise specified)CASETable 4. StaticSymbol Parameter ..
STD60NF06 ,N-CHANNEL 60 VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STD60NF06T4 ,N-CHANNEL 60 VSTD60NF06N-CHANNEL 60V - 0.014Ω - 60A DPAKSTripFET™ II POWER MOSFETTYPE V R IDSS DS(on) DSTD60NF06 ..
STD60NF3LL ,N-CHANNEL 30V 0.0075 OHM 60A DPAK STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD60NF3LLT4 ,N-CHANNEL 30V 0.0075 OHM 60A DPAK STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD60NF3LL-T4 ,N-CHANNEL 30V 0.0075 OHM 60A DPAK STRIPFET II POWER MOSFETSTD60NF3LLN-CHANNEL 30V - 0.0075Ω - 60A DPAKSTripFET™ II POWER MOSFETTYPE V R IDSS DS(on) DSTD60NF3 ..
SUB75P03-07-E3 , P-Channel 30-V (D-S) 175 °C MOSFET
SUB75P05-08 ,P-Channel 55-V (D-S) 175C MOSFET FaxBack 408-970-5600S-99404—Rev. B, 29-Nov-992-3C – Capacitance (pF) g – Transconductance (S) ..
SUB85N02-03 ,N-Channel 20-V (D-S) 175C MOSFETS-03181—Rev. A, 05-Mar-011SUP/SUB85N02-03New ProductVishay Siliconix ..
SUB85N03-04P ,N-Channel 30-V (D-S) 175C MOSFETS-20120—Rev. B, 12-Mar-023C – Capacitance (pF) g – Transconductance (S)fs I – Drain Current (A)D ..
SUB85N03-07P ,N-Channel 30-V (D-S) 175C MOSFETSUP/SUB85N03-07PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175C MOSFET
STD60N55F3
N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in DPAK package
April 2009 Doc ID 13242 Rev 4 1/20
STB60N55F3, STD60N55F3, STF60N55F3
STI60N55F3, STP60N55F3, STU60N55F3N-channel 55 V, 6.5 mΩ , 80 A, DP AK, IP AK, D2P AK, I2P AK, TO-220
TO-220FP ST ripFET™ III Power MOSFET
Features Standard threshold drive 100% avalanche tested
Application Switching applications
DescriptionThis STripFET™ III Power MOSFET technology
is among the latest improvements, which have
been especially tailored to minimize on-state
resistance providing superior switching
performances.
Figure 1. Internal schematic diagram
Table 1. Device summary
Contents STx60N55F32/20 Doc ID 13242 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
STx60N55F3 Electrical ratings
Doc ID 13242 Rev 4 3/20
1 Electrical ratings
Table 2. Absolute maximum ratings Pulse width limited by safe operating area ISD < 80 A, di/dt < 300A/µs, VDD < V(BR)DSS. Tj < Tjmax Starting Tj=25°C, Id=32 A, Vdd= 25 V
Table 3. Thermal resistance When mounted on FR-4 board of 1inch², 2oz Cu
Electrical characteristics STx60N55F3
4/20 Doc ID 13242 Rev 4
2 Electrical characteristics
(TCASE= 25 °C unless otherwise specified)
Table 4. Static
Table 5. Dynamic Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 6. Switching on/off (inductive load)
STx60N55F3 Electrical characteristics
Doc ID 13242 Rev 4 5/20
Table 7. Source drain diode Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Electrical characteristics STx60N55F3
6/20 Doc ID 13242 Rev 4
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220
D²PAK / IPAK / I²PAK / DPAK
Figure 3. Thermal impedance for TO-220
D²PAK / IPAK / I²PAK / DPAK
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
STx60N55F3 Electrical characteristics
Doc ID 13242 Rev 4 7/20
Figure 6. Output characteristics Figure 7. Transfer characteristics
Figure 8. Normalized BVDSS vs temperature Figure 9. Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Electrical characteristics STx60N55F3
8/20 Doc ID 13242 Rev 4
Figure 12. Normalized gate threshold voltage
vs temperature
Figure 13. Normalized on resistance vs
temperature
Figure 14. Source-drain diode forward
characteristics
STx60N55F3 Test circuits
Doc ID 13242 Rev 4 9/20
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped inductive load test
circuit
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
Package mechanical data STx60N55F3
10/20 Doc ID 13242 Rev 4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: .
ECOP ACK is an ST trademark.
