Home ›  S › S101 > STD60N3LH5,N-channel 30 V, 0.0072 Ohm typ., 48 A STripFET(TM) V Power MOSFET in DPAK package

STD60N3LH5 Fast Delivery,Good Price
Part Number:

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
STD60N3LH5	ST CHINA	N/a	30000	avai	N-channel 30 V, 0.0072 Ohm typ., 48 A STripFET(TM) V Power MOSFET in DPAK package

STD60N3LH5 ,N-channel 30 V, 0.0072 Ohm typ., 48 A STripFET(TM) V Power MOSFET in DPAK packageElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. StaticSymbol Paramete ..
STD60N55F3 ,N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in DPAK packageElectrical characteristics(T = 25 °C unless otherwise specified)CASETable 4. StaticSymbol Parameter ..
STD60NF06 ,N-CHANNEL 60 VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STD60NF06T4 ,N-CHANNEL 60 VSTD60NF06N-CHANNEL 60V - 0.014Ω - 60A DPAKSTripFET™ II POWER MOSFETTYPE V R IDSS DS(on) DSTD60NF06 ..
STD60NF3LL ,N-CHANNEL 30V 0.0075 OHM 60A DPAK STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD60NF3LLT4 ,N-CHANNEL 30V 0.0075 OHM 60A DPAK STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
SUB75P03-07 ,P-Channel 30-V(D-S) 175C MOSFET
FaxBack 408-970-5600S-00821—Rev. B, 24-Apr-002-1SUP/SUB75P03-07Vishay Siliconix

---

STD60N3LH5
N-channel 30 V, 0.0072 Ohm typ., 48 A STripFET(TM) V Power MOSFET in DPAK package
August 2013 DocID14079 Rev 5 1/19
STD60N3LH5
N-channel 30 V , 0.0072 Ω typ., 48 A STripFET™ V Power MOSFET
in a DPAK package
Datasheet - not recommended for new design
Figure 1. Internal schematic diagram
Features RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses
Applications Switching applications
Description
This device is an N-channel Power MOSFET
developed using STMicroelectronics’
STripFET™V technology. The device has been
optimized to achieve very low on-state resistance,
contributing to a FOM that is among the best in its
class.
Table 1. Device summary
Contents STD60N3LH5
2/19 DocID14079 Rev 5
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
DocID14079 Rev 5 3/19
STD60N3LH5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings Limited by wire bonding. Pulse width limited by safe operating area. Starting Tj = 25 °C, ID = 24 A, VDD = 12 V.
Table 3. Thermal resistance When mounted on FR-4 board of 1inch², 2oz Cu
Electrical characteristics STD60N3LH5
4/19 DocID14079 Rev 5
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. Static
Table 5. Dynamic
DocID14079 Rev 5 5/19
STD60N3LH5 Electrical characteristics
Table 6. Switching on/off (resistive load)
Table 7. Source drain diode Pulsed: pulse duration = 300µs, duty cycle 1.5%