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Partno	Mfg	Dc	Qty	Available	Descript
STD5NM60T4	ST	N/a	21600	avai	N-CHANNEL 650V @Tjmax- 0.9 OHM

STD5NM60T4 ,N-CHANNEL 650V @Tjmax- 0.9 OHMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTD5NM60STP8NM60 STP8NM60FPSTD5NM60-1V Drain-sou ..
STD60N3LH5 ,N-channel 30 V, 0.0072 Ohm typ., 48 A STripFET(TM) V Power MOSFET in DPAK packageElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. StaticSymbol Paramete ..
STD60N55F3 ,N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in DPAK packageElectrical characteristics(T = 25 °C unless otherwise specified)CASETable 4. StaticSymbol Parameter ..
STD60NF06 ,N-CHANNEL 60 VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STD60NF06T4 ,N-CHANNEL 60 VSTD60NF06N-CHANNEL 60V - 0.014Ω - 60A DPAKSTripFET™ II POWER MOSFETTYPE V R IDSS DS(on) DSTD60NF06 ..
STD60NF3LL ,N-CHANNEL 30V 0.0075 OHM 60A DPAK STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
SUB75N06-08 ,N-Channel Enhancement-Mode Trans S-05111—Rev. F, 10-Dec-012-1SUP/SUB75N06-08Vishay Siliconix ..
SUB75N08-09L ,N-Channel 75-V (D-S) 175C MOSFETSUP/SUB75N08-09LNew ProductVishay SiliconixN-Channel 75-V (D-S), 175C MOSFET

STD5NM60T4
N-CHANNEL 650V @Tjmax- 0.9 OHM
1/13August 2003
STP8NM60, STP8NM60FP
STD5NM60, STD5NM60-1
N-CHANNEL 600V- 0.9Ω- 8A TO-220/TO-220FP/DPAK/IPAK
MDmesh™ Power MOSFET TYPICAL RDS(on)= 0.9Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
CHARGE LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh™isa new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product hasan outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance thatis significantly better than
thatof similar completition’s products.
APPLICATIONS
The MDmesh™ familyis very suitable for increase
the power densityof high voltage converters allow-
ing system miniaturization and higher efficiencies.
ORDERING INFORMATION
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
2/13
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤5A, di/dt ≤400A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
3/13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
4/13
Safe Operating Area For TO-220FP
Safe Operating Area For TO-220 Thermal Impedance For TO-220
Safe Operating Area For DPAK/IPAK
Thermal Impedance For TO-220FP
Thermal Impedance For DPAK/IPAK
5/13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
Transconductance Static Drain-source On Resistance
Transfer CharacteristicsOutput Characteristics
Capacitance VariationsGate Chargevs Gate-source Voltage
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
6/13
Normalized On Resistancevs TemperatureNormalized Gate Thereshold Voltagevs Temp.
Source-drain Diode Forward Characteristics
7/13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
Fig.5: Test Inductive
Fig.4: Gate Charge test CircuitFig.
Fig.3: Switching
Resistive Load

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