STD5NM50-1 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STD5NM50T4 ,N-CHANNEL 550V @TjmaxELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD5NM60 ,N-CHANNEL 600VELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASEON/OFFSymbol Parameter Test Cond ..
STD5NM60T4 ,N-CHANNEL 650V @Tjmax- 0.9 OHMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTD5NM60STP8NM60 STP8NM60FPSTD5NM60-1V Drain-sou ..
STD60N3LH5 ,N-channel 30 V, 0.0072 Ohm typ., 48 A STripFET(TM) V Power MOSFET in DPAK packageElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. StaticSymbol Paramete ..
STD60N55F3 ,N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in DPAK packageElectrical characteristics(T = 25 °C unless otherwise specified)CASETable 4. StaticSymbol Parameter ..
SUB75N05-06 ,N-Channel Enhancement-Mode TransS-05110—Rev. E, 10-Dec-012-1SUP/SUB75N05-06Vishay Siliconix ..
SUB75N05-06 ,N-Channel Enhancement-Mode TransS-05110—Rev. E, 10-Dec-012-2SUP/SUB75N05-06Vishay Siliconix ..
SUB75N05-06 ,N-Channel Enhancement-Mode TransS-05110—Rev. E, 10-Dec-012-1SUP/SUB75N05-06Vishay Siliconix ..
SUB75N05-07 ,N-Channel 55-V (D-S) 175C MOSFET FaxBack 408-970-5600S-60952—Rev. A, 19-Apr-992-1SUP/SUB75N05-07New ProductVishay Siliconix ..
SUB75N06-08 ,N-Channel Enhancement-Mode Trans S-05111—Rev. F, 10-Dec-012-1SUP/SUB75N06-08Vishay Siliconix ..
SUB75N08-09L ,N-Channel 75-V (D-S) 175C MOSFETSUP/SUB75N08-09LNew ProductVishay SiliconixN-Channel 75-V (D-S), 175C MOSFET
STD5NM50-STD5NM50-1
N-CHANNEL 500V
1/10September 2002
STD5NM50
STD5NM50-1N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK
MDmesh™Power MOSFET
(1) ISD ≤ 5A, di/dt ≤ 400A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. TYPICAL RDS(on) = 0.7Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTIONThe MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONSThe MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
STD5NM50/STD5NM50-1
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/10
STD5NM50/STD5NM50-1
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal Impedance Safe Operating Area
STD5NM50/STD5NM50-1
Gate Charge vs Gate-source Voltage
Static Drain-source On Resistance
Transfer Characteristics
Transconductance
Output Characteristics
5/10
STD5NM50/STD5NM50-1
Normalized On Resistance vs Temperature
Normalized BVDSS vs Temperature
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
STD5NM50/STD5NM50-1
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
