STD5NK50Z ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTD5NK50ZSTP5NK50Z STP5NK50ZFPSTD5NK50Z-1V Drain ..
STD5NK50ZT4 ,N-CHANNEL 500VAbsolute Maximum ratingsSymbol Parameter Value UnitSTP5NK50Z STD5NK50ZSTP5NK50ZFPSTB5NK50Z/-1 STD5N ..
STD5NK60Z ,N-CHANNEL 600VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STD5NK60ZT4 ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP5NK60ZSTP5NK60ZFPSTD5NK60ZV Drain-source Volt ..
STD5NM50 ,N-CHANNEL 500VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD5NM50-1 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
SUB75N03-04 ,N-Channel 30-V (D-S) 175C MOSFETSUP/SUB75N03-04Vishay SiliconixN-Channel 30-V (D-S), 175C MOSFET V (V) r () I (A)(BR) ..
SUB75N03-07 ,N-Channel 30-V (D-S) 175 MOSFETSUP/SUB75N03-07Vishay SiliconixN-Channel 30-V (D-S) 175C MOSFET
STD5NK50Z-STP5NK50Z-STP5NK50ZFP
N-CHANNEL 500V
1/13February 2003
STP5NK50Z- STP5NK50ZFP
STD5NK50Z- STD5NK50Z-1N-CHANNEL 500V-1.22Ω-4.4A TO-220/TO-220FP/DPAK/IPAK
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)= 1.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP5NK50Z- STP5NK50ZFP- STD5NK50Z- STD5NK50Z-12/13
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤4.4A, di/dt ≤200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto souce.In this respect the Zener voltageis appropriateto achievean efficient and cost-
effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the usage external components.
3/13
STP5NK50Z- STP5NK50ZFP- STD5NK50Z- STD5NK50Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP5NK50Z- STP5NK50ZFP- STD5NK50Z- STD5NK50Z-14/13
Safe Operating Area For TO-220/DPAK/IPAK
Output Characteristics
Thermal Impedance For TO-220/DPAK/IPAK
Safe Operating Area For TO-220FP
5/13
STP5NK50Z- STP5NK50ZFP- STD5NK50Z- STD5NK50Z-1
Transconductance
Normalized Gate Threshold Voltagevs Temp. Normalized On Resistancevs Temperature
Gate Chargevs Gate-source Voltage Capacitance Variations
Static Drain-source On Resistance
STP5NK50Z- STP5NK50ZFP- STD5NK50Z- STD5NK50Z-16/13
Source-drain Diode Forward Characteristics Normalized BVDSSvs Temperature
Maximum Avalanche Energyvs Temperature
7/13
STP5NK50Z- STP5NK50ZFP- STD5NK50Z- STD5NK50Z-1
Fig.5: Test Inductive
Fig.4: Gate Charge test Circuit
Fig.
Fig.3: Switching
Resistive Load
