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Partno	Mfg	Dc	Qty	Available	Descript
STD5NE10	ST	N/a	25200	avai	N-CHANNEL 100V

STD5NE10 ,N-CHANNEL 100VSTD5NE10®N - CHANNEL 100V - 0.32 Ω - 5A TO-251/TO-252STripFET™ POWER MOSFETTYPE V R IDSS DS(on) ..
STD5NE10L ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVDS Drain-source Voltage (VGS =0) 100 VV 100 VDr ..
STD5NE10LT4 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVDS Drain-source Voltage (VGS =0) 100 VV 100 VDr ..
STD5NE10T4 ,N-CHANNEL 100VSTD5NE10®N - CHANNEL 100V - 0.32 Ω - 5A TO-251/TO-252STripFET™ POWER MOSFETTYPE V R IDSS DS(on) ..
STD5NK40Z ,N-CHANNEL 400VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTD5NK40ZSTP5NK40Z STP5NK40ZFPSTD5NK40Z-1V Drain ..
STD5NK50Z ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTD5NK50ZSTP5NK50Z STP5NK50ZFPSTD5NK50Z-1V Drain ..
SUB70N04-10 ,N-Channel 40-V (D-S) 175C MOSFET, Logic LevelS-05110—Rev. D, 10-Dec-012-3C – Capacitance (pF) g – Transconductance (S) I – Drain Current (A)f ..
SUB70N04-10 ,N-Channel 40-V (D-S) 175C MOSFET, Logic LevelS-05110—Rev. D, 10-Dec-012-1SUP/SUB70N04-10Vishay Siliconix
  
  ..
SUB70N04-10 ,N-Channel 40-V (D-S) 175C MOSFET, Logic LevelSUP/SUB70N04-10Vishay SiliconixN-Channel 40-V (D-S), 175
C MOSFET
 V (V) r (
) I (A)(BR) ..
SUB70N06-14 ,N-Channel Enhancement-Mode Trans
FaxBack 408-970-5600S-57253—Rev. C, 24-Feb-982-3C – Capacitance (pF) g – Transconductance (S) ..
SUB75N03-04 ,N-Channel 30-V (D-S) 175C MOSFETSUP/SUB75N03-04Vishay SiliconixN-Channel 30-V (D-S), 175
C MOSFET
 V (V) r (
) I (A)(BR) ..
SUB75N03-07 ,N-Channel 30-V (D-S) 175 MOSFETSUP/SUB75N03-07Vishay SiliconixN-Channel 30-V (D-S) 175C MOSFET 

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STD5NE10
N-CHANNEL 100V
STD5NE10
N - CHANNEL 100V - 0.32 Ω - 5A TO-251/TO-252
STripFET POWER MOSFET TYPICAL RDS(on) = 0.32 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE TESTED 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION ADD SUFFIX "T4" FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size" strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS MOTOR CONTROL (DISK DRIVES, etc.) DC-DC & DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION
May 1999
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area (1) ISD ≤ 5A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STD5NE10
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for Thermal Impedance
STD5NE10
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Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STD5NE10
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Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STD5NE10
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Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STD5NE10
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