STD5N20T4 ,N-CHANNEL 200VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 200 VDS GSV Drain ..
STD5N20T4 ,N-CHANNEL 200VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD5N20-T4 ,N-CHANNEL 200VSTD5N20N-CHANNEL 200V - 0.6Ω - 5A DPAKMESH OVERLAY™ MOSFETTYPE V R IDSS DS(on) DSTD5N20 200 V < 0.8 ..
STD5NE10 ,N-CHANNEL 100VSTD5NE10®N - CHANNEL 100V - 0.32 Ω - 5A TO-251/TO-252STripFET™ POWER MOSFETTYPE V R IDSS DS(on) ..
STD5NE10L ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVDS Drain-source Voltage (VGS =0) 100 VV 100 VDr ..
STD5NE10LT4 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVDS Drain-source Voltage (VGS =0) 100 VV 100 VDr ..
SUB70N03-09BP ,N-Channel 30-V (D-S) 175C MOSFET PWM OptimizedS-20102—Rev. B, 11-Mar-022SUP/SUB70N03-09BPNew ProductVishay Siliconix ..
SUB70N03-09P ,N-Channel 30-V (D-S) 175C MOSFET PWM OptimizedSUP/SUB70N03-09PVishay SiliconixN-Channel 30-V (D-S), 175C, MOSFET PWM Optimized
STD5N20T4-STD5N20-T4
N-CHANNEL 200V
1/8December 2000
STD5N20N-CHANNEL 200V - 0.6Ω - 5A DPAK
MESH OVERLAY™ MOSFET TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED ADD SUFFIX “T4” FOR OREDERING IN TAPE &
REEL
DESCRIPTIONUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD ≤5A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(**) Limited only by Maximum Temperature Allowed
STD5N20
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
STD5N20
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal ImpedanceSafe Operating Area
STD5N20
Gate Charge vs Gate-source Voltage
Tranconductance
Output Characteristics
Capacitance Variations
5/8
STD5N20
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
