STD5N20L ,N-CHANNEL 200VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTD5N20L 200 V < 0.7 Ω 5 A 33 W
STD5N20L-STD5N20LT4
N-CHANNEL 200V
1/10September 2004
STD5N20LN-CHANNEL 200V - 0.65Ω - 5A DPAK
STripFET™ MOSFET
Rev. 3
STD5N20L2/10
Table 3: Absolute Maximum ratings ) Pulse width limited by safe operating area
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
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STD5N20L
Table 6: Dynamic
Table 7: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Starting Tj =25 °C, Id = 5 A, VDD = 50 V
(*) Pulse width limited by safe operating area
STD5N20L4/10
Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 5: Transconductance
Figure 6: Thermal Impedance
Figure 7: Transfer Characteristics
Figure 8: Static Drain-source On Resistance
5/10
STD5N20L
Figure 9: Gate Charge vs Gate-source Voltage
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 11: Source-Drain Diode Forward Char-
acteristics
Figure 12: Capacitance Variations
Figure 13: Normalized On Resistance vs Tem-
perature
STD5N20L6/10
Figure 14: Switching Times Test Circuit For
Resistive Load
Figure 15: Test Circuit For Inductive Load
Switching and Diode Recovery Times
Figure 16: Gate Charge Test Circuit
