STD55NH2LL-1 ,N-CHANNEL 24VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit(1)V Drain-source Voltage Rating 30 VspikeV Drai ..
STD55NH2LLT4 ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD5N20 ,N-CHANNEL 200VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 200 VDS GSV Drain ..
STD5N20L ,N-CHANNEL 200VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTD5N20L 200 V < 0.7 Ω 5 A 33 W
STD55NH2LL-STD55NH2LL-1-STD55NH2LLT4
N-CHANNEL 24V
1/12March 2004
STD55NH2LLN-CHANNEL 24V - 0.010 Ω - 40A DPAK/IPAK
ULTRA LOW GATE CHARGE STripFET™ POWER MOSFET TYPICAL RDS(on) = 0.01 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 4.5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTIONThe STD55NH2LL is based on the latest generation of
ST's proprietary STripFET™ technology. An innovative
layout enables the device to also exhibit extremely low
gate charge for the most demanding requirements as
high-side switch in high-frequency DC-DC converters. It's
therefore ideal for high-density converters in Telecom
and Computer applications.
APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
Ordering Information
ABSOLUTE MAXIMUM RATINGS
STD55NH2LL
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF
ON (4)
DYNAMIC
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STD55NH2LL
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE(1) Garanted when external Rg=4.7 Ω and tf < tfmax. (4) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area (5) Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Appendix A
(3) Starting Tj = 25 oC, ID = 20A, VDD = 15V (*) Value limited by wire bonding
.
ELECTRICAL CHARACTERISTICS (continued)
STD55NH2LL
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STD55NH2LL
