STD4NC50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STD4NC50-1 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STD4NC50T4 ,N-CHANNEL 500VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD4NK50Z ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTD4NK50ZSTP4NK50Z STP4NK50ZFPSTD4NK50Z-1V Drain ..
STD4NK50Z-1 ,N-CHANNEL 500VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STD4NK50ZD , N-channel 500V - 2.4Ω - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH™ Power MOSFET
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)AParameter Symbol Limit UnitDrain-Source ..
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETS-20966—Rev. C, 01-Jul-02 1SUP/SUB15P01-52Vishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWIS ..
SUB40N06-25L ,N-Channel Enhancement-Mode MOSFETs, Logic LevelSUP/SUB40N06-25LVishay SiliconixN-Channel 60-V (D-S), 175C MOSFET, Logic Level
STD4NC50
N-CHANNEL 500V
1/9August 2001
STD4NC50
STD4NC50-1N-CHANNEL 500V - 1.3Ω - 3.7A DPAK/IPAK
PowerMesh™II MOSFET TYPICAL RDS(on) = 1.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTIONThe PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS SWITH MODE LOW POWER SUPPLIES
(SMPS) HIGH CURRENT, HIGH SPEED SWITCHING DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD ≤3.7A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
STD4NC50/-1
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STD4NC50/-1
Thermal Impedence
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area
STD4NC50/-1
Output Characteristics
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
5/9
STD4NC50/-1
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
STD4NC50/-1
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
