STD4N20-1 ,N-CHANNEL 200VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 200 VDS GSV Drain ..
STD4NA40 , N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STD4NB25 ,N-CHANNEL 250VSTD4NB25®N - CHANNEL 250V - 0.95Ω - 4A - DPAK/IPAKPowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS ..
STD4NB25T4 ,N-CHANNEL 250VSTD4NB25®N - CHANNEL 250V - 0.95Ω - 4A - DPAK/IPAKPowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS ..
STD4NB40T4 ,N-CHANNEL 400V 1.47 OHM 4A DPAK/IPAK POWERMESH MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)400 VDS GSV Drain- ..
STD4NB40-T4 ,N-CHANNEL 400V 1.47 OHM 4A DPAK/IPAK POWERMESH MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)AParameter Symbol Limit UnitDrain-Source ..
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETS-20966—Rev. C, 01-Jul-02 1SUP/SUB15P01-52Vishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWIS ..
SUB40N06-25L ,N-Channel Enhancement-Mode MOSFETs, Logic LevelSUP/SUB40N06-25LVishay SiliconixN-Channel 60-V (D-S), 175C MOSFET, Logic Level
STD4N20-1
N-CHANNEL 200V
1/9February 2001
STD4N20N-CHANNEL 200V - 1.2Ω - 4A DPAK/IPAK
MESH OVERLAY™ MOSFET TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED ADD SUFFIX “T4” FOR OREDERING IN TAPE &
REEL
DESCRIPTIONUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD ≤4A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
STD4N20
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STD4N20
Thermal Impedance
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area
STD4N20
Tranconductance
Output Characteristics
Gate Charge vs Gate-source Voltage Capacitance Variations
5/9
STD4N20
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
