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Partno	Mfg	Dc	Qty	Available	Descript
STD40NF10	ST	N/a	609	avai	N-channel 100 V, 0.025 Ohm, 50 A DPAK low gate charge STripFET(TM) II Power MOSFET

STD40NF10 ,N-channel 100 V, 0.025 Ohm, 50 A DPAK low gate charge STripFET(TM) II Power MOSFETElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. On/off state ..
STD40NF3LL ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVDrain-sourceVoltage(V=0) 30 VDS GSVDrain-gateVo ..
STD40NF3LLT4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STD44N4LF6 ,N-channel 40 V, 8.9 mOhm, 44 A , DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFETElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 5. StaticSymbol Paramete ..
STD45NF75 ,N-CHANNEL 75VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)75 VDS GSV Drain-g ..
STD45NF75T4 ,N-CHANNEL 75VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETABSOLUTE MAXIMUM RATINGS (T = 25
C UNLESS OTHERWISE NOTED)AParameter Symbol Limit UnitDrain-Source ..
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETS-20966—Rev. C, 01-Jul-02 1SUP/SUB15P01-52Vishay SiliconixSPECIFICATIONS (T = 25
C UNLESS OTHERWIS ..
SUB40N06-25L ,N-Channel Enhancement-Mode MOSFETs, Logic LevelSUP/SUB40N06-25LVishay SiliconixN-Channel 60-V (D-S), 175C MOSFET, Logic Level 

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STD40NF10
N-channel 100 V, 0.025 Ohm, 50 A DPAK low gate charge STripFET(TM) II Power MOSFET
November 2010 Doc ID 18254 Rev 1 1/13
STD40NF10
N-channel 100 V , 0.025 Ω , 50 A DP AK
low gate charge ST ripFET™ II Power MOSFET
Features Exceptional dv/dt capability Low gate charge 100% avalanche tested
Application
Switching applications
Description
This N-channel 100 V Power MOSFET is the
latest development of STMicroelectronics unique
single feature size strip-based process. The
resulting transistor shows extremely high packing
density for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
allowing remarkable manufacturing
reproducibility.

Table 1. Device summary
Contents STD40NF10
2/13 Doc ID 18254 Rev 1
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STD40NF10 Electrical ratings
Doc ID 18254 Rev 1 3/13
1 Electrical ratings
Table 2. Absolute maximum ratings Limited by wire bonding Pulse width limited by safe operating area ISD ≤ 50 A, di/dt ≤ 600 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Starting Tj= 25 °C, ID= 50 A, VDD = 25 V
Table 3. Thermal data
Electrical characteristics STD40NF10
4/13 Doc ID 18254 Rev 1
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)




Table 4. On/off states
Table 5. Dynamic Pulsed: Pulse duration = 300 µs, duty cycle 1.5.
Table 6. Switching times
STD40NF10 Electrical characteristics
Doc ID 18254 Rev 1 5/13

























Table 7. Source drain diode Pulse width limited by safe operating area. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Electrical characteristics STD40NF10
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance
STD40NF10 Electrical characteristics
Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs. temperature
Figure 11. Normalized on resistance vs.
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized breakdown voltage vs.