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Partno	Mfg	Dc	Qty	Available	Descript
STD3NK90Z	ST	N/a	500	avai	N-CHANNEL 900V 4.1 OHM 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET
STP3NK90Z	ST	N/a	50	avai	N-CHANNEL 900V 4.1 OHM 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET
STP3NK90ZFP	ST	N/a	47000	avai	N-CHANNEL 900V 4.1 OHM 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET

STP3NK90ZFP ,N-CHANNEL 900V 4.1 OHM 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFETAPPLICATIONS

STD3NK90Z-STP3NK90Z-STP3NK90ZFP
N-CHANNEL 900V 4.1 OHM 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET
1/13November 2002
STP3NK90Z- STP3NK90ZFP
STD3NK90Z- STD3NK90Z-1
N-CHANNEL 900V- 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)= 4.1Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP3NK90Z- STP3NK90ZFP- STD3NK90Z- STD3NK90Z-1
2/13
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤3A, di/dt ≤200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/13
STP3NK90Z- STP3NK90ZFP- STD3NK90Z- STD3NK90Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP3NK90Z- STP3NK90ZFP- STD3NK90Z- STD3NK90Z-1
4/13
Safe Operating Area For TO-220FPSafe Operating Area For TO-220/DPAK/IPAK
Transfer CharacteristicsOutput Characteristics
Thermal Impedance For TO-220/DPAK/IPAK
5/13
STP3NK90Z- STP3NK90ZFP- STD3NK90Z- STD3NK90Z-1
Transconductance
Normalized Gate Threshold Voltagevs Temp. Normalized On Resistancevs Temperature
Gate Chargevs Gate-source Voltage Capacitance
Static Drain-source On Resistance
STP3NK90Z- STP3NK90ZFP- STD3NK90Z- STD3NK90Z-1
6/13
Maximum Avalanche Energyvs Temperature
Source-drain Diode Forward Characteristics Normalized BVDSSvs Temperature
7/13
STP3NK90Z- STP3NK90ZFP- STD3NK90Z- STD3NK90Z-1
Fig.5: Test Inductive
Fig.4: Gate Charge test CircuitFig.
Fig.3: Switching
Resistive Load

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