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STD3NK80Z-STD3NK80Z-1-STF3NK80Z-STP3NK80Z
N-CHANNEL 800V
1/13September 2003
STP3NK80Z- STF3NK80Z
STD3NK80Z- STD3NK80Z-1N-CHANNEL 800V- 3.8Ω- 2.5A TO-220/FP/DPAK/IPAK
Zener-Protected SuperMESH™ Power MOSFET TYPICAL RDS(on)= 3.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP3NK80Z- STF3NK80Z- STD3NK80Z- STD3NK80Z-12/13
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤ 2.5A, di/dt ≤ 200 A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/13
STP3NK80Z- STF3NK80Z- STD3NK80Z- STD3NK80Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP3NK80Z- STF3NK80Z- STD3NK80Z- STD3NK80Z-14/13
Transfer CharacteristicsOutput Characteristics
Thermal Impedance For TO-220FPSafe Operating Area For TO-220FP
Thermal Impedance For TO-220/DPAK/IPAKSafe Operating Area For TO-220/DPAK/IPAK
5/13
STP3NK80Z- STF3NK80Z- STD3NK80Z- STD3NK80Z-1
Normalized On Resistancevs TemperatureNormalized Gate Threshold Voltagevs Temp.
Capacitance VariationsGate Chargevs Gate-source Voltage
Static Drain-source On ResistanceTransconductance
STP3NK80Z- STF3NK80Z- STD3NK80Z- STD3NK80Z-16/13
Maximum Avalanche Energyvs Temperature
Source-drain Diode Forward Characteristics Normalized BVDSSvs Temperature
7/13
STP3NK80Z- STF3NK80Z- STD3NK80Z- STD3NK80Z-1
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
