STD3NC60 ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 600 VDS GSV Drain- ..
STD3NC60T4 ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 600 VDS GSV Drain- ..
STD3NK50Z ,N-CHANNEL 500VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in-back-to-back Zener diodes have specifically bee ..
STD3NK50Z-1 ,N-CHANNEL 500VAbsolute Maximum ratingsSymbol Parameter Value UnitDPAK/IPAK TO-92V Drain-source Voltage (V = 0) 50 ..
STD3NK50ZT4 ,N-CHANNEL 500VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTQ3NK50ZR-AP 500 V 3.3 Ω 0.5 A 3 WSTD3NK50Z 50 ..
STD3NK60ZT4 ,N-CHANNEL 600VSTP3NK60Z - STP3NK60ZFPSTB3NK60Z-STD3NK60Z-STD3NK60Z-1N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/FP/D2PAK/ ..
STZ6.8T , Zener diode
STZC6.8N , ESD Protection diode
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)AParameter Symbol Limit UnitDrain-Source ..
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETS-20966—Rev. C, 01-Jul-02 1SUP/SUB15P01-52Vishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWIS ..
SUB40N06-25L ,N-Channel Enhancement-Mode MOSFETs, Logic LevelSUP/SUB40N06-25LVishay SiliconixN-Channel 60-V (D-S), 175C MOSFET, Logic Level
STD3NC60
N-CHANNEL 600V
1/10August 2002
STD3NC60
STD3NC60-1N-CHANNEL 600V- 1.8Ω - 3.2A DPAK/ IPAK
PowerMesh™II MOSFET TYPICAL RDS(on)= 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERINGIN TAPE&
REEL (SMD PACKAGE)
DESCRIPTIONThe PowerMESH™IIis the evolutionof the first
generationof MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figureof merit while keeping the deviceat the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limitedby safe operating area
(1)ISD ≤3.2A, di/dt ≤300A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
STD3NC60- STD3NC60-12/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
3/10
STD3NC60- STD3NC60-1
Safe Operating Area
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration= 300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
Thermal Impedance
STD3NC60- STD3NC60-14/10
Tranconductance
Capacitance VariationsGate Chargevs Gate-source Voltage
Output Characteristics
5/10
STD3NC60- STD3NC60-1
Normalized On Resistancevs Temperature
Source-drain Diode Forward Characteristics
STD3NC60- STD3NC60-16/10
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
