STD3NC50T4 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STD3NC60 ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 600 VDS GSV Drain- ..
STD3NC60T4 ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 600 VDS GSV Drain- ..
STD3NK50Z ,N-CHANNEL 500VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in-back-to-back Zener diodes have specifically bee ..
STD3NK50Z-1 ,N-CHANNEL 500VAbsolute Maximum ratingsSymbol Parameter Value UnitDPAK/IPAK TO-92V Drain-source Voltage (V = 0) 50 ..
STD3NK50ZT4 ,N-CHANNEL 500VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTQ3NK50ZR-AP 500 V 3.3 Ω 0.5 A 3 WSTD3NK50Z 50 ..
STZ6.8T , Zener diode
STZC6.8N , ESD Protection diode
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)AParameter Symbol Limit UnitDrain-Source ..
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETS-20966—Rev. C, 01-Jul-02 1SUP/SUB15P01-52Vishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWIS ..
SUB40N06-25L ,N-Channel Enhancement-Mode MOSFETs, Logic LevelSUP/SUB40N06-25LVishay SiliconixN-Channel 60-V (D-S), 175C MOSFET, Logic Level
STD3NC50T4
N-CHANNEL 500V
1/9May 2002
STD3NC50
STD3NC50-1N-CHANNEL 500V - 2.2Ω - 3.2A DPAK / IPAK
PowerMesh™II MOSFET TYPICAL RDS(on) = 2.2Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTIONThe PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD ≤3.2A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
STD3NC50 / STD3NC50-1
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STD3NC50 / STD3NC50-1
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area Thermal Impedance
STD3NC50 / STD3NC50-1
Capacitance Variations
Output Characteristics
Tranconductance
Gate Charge vs Gate-source Voltage
5/9
STD3NC50 / STD3NC50-1
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
STD3NC50 / STD3NC50-1
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuits For Resistive Load
