STD38NH02LT4 ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD3N62K3 ,N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in DPAK packageFeatures R 3DS(on) 3Type V I P2DSS D D 1max1DPAKSTB3N62K3 620 V < 2.5 Ω 2.7 A 45 WIPAKSTD3N ..
STD3NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTD3NA50N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD3NA50 500 V < 3 Ω ..
STD3NC50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STD3NC50T4 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STD3NC60 ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 600 VDS GSV Drain- ..
STZ5.6N , Zener diode
STZ6.8T , Zener diode
STZC6.8N , ESD Protection diode
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)AParameter Symbol Limit UnitDrain-Source ..
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETS-20966—Rev. C, 01-Jul-02 1SUP/SUB15P01-52Vishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWIS ..
SUB40N06-25L ,N-Channel Enhancement-Mode MOSFETs, Logic LevelSUP/SUB40N06-25LVishay SiliconixN-Channel 60-V (D-S), 175C MOSFET, Logic Level
STD38NH02LT4
N-CHANNEL 24V
1/12September 2003
STD38NH02LN-CHANNEL 24V - 0.011 Ω - 38A DPAK/IPAK
STripFET™ III POWER MOSFET TYPICAL RDS(on) = 0.011 Ω @ 10 V TYPICAL RDS(on) = 0.015 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTIONThe STD38NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
Ordering Information
ABSOLUTE MAXIMUM RATINGS
INTERNAL SCHEMATIC DIAGRAM
STD38NH02L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF
ON (4)
DYNAMIC
3/12
STD38NH02L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE(1) Garanted when external Rg=4.7 Ω and tf < tfmax. (4) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area (5) Qoss = Coss*Δ Vin , Coss = Cgd + Cds . See Appendix A
(3) Starting Tj = 25 oC, ID = 19A, VDD = 18V .
ELECTRICAL CHARACTERISTICS (continued)Safe Operating Area
STD38NH02LOutput Characteristics Transfer Characteristics
5/12
STD38NH02LNormalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test CircuitAnd Diode Recovery Times
