STD35N3LH5 ,N-channel 30 V, 14 mOhm;, 35 A, DPAK STripFET(TM); V Power MOSFETElectrical characteristics(T = 25 °C unless otherwise specified)CASETable 5. StaticSymbol Parameter ..
STD35NF06 ,N-CHANNEL 60V 0.018 OHM 55AABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STD35NF06L ,N-CHANNEL 60V 0.014 OHM 35A DPAK STRIPFET II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STD35NF06LT4 ,N-CHANNEL 60V 0.014 OHM 35A DPAK STRIPFET II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STD35NF06LT4 ,N-CHANNEL 60V 0.014 OHM 35A DPAK STRIPFET II MOSFETSTD35NF06LN-CHANNEL 60V - 0.014 Ω - 35A DPAKSTripFET™ II POWER MOSFETTYPE V R IDSS DS(on) DSTD35NF0 ..
STD35NF06L-T4 ,N-CHANNEL 60V 0.014 OHM 35A DPAK STRIPFET II MOSFETELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STX-RLINK ,In-circuit debugger/programmer for STM8, ST7, STM32, STR7 and STR9 microcontrollersapplications code using optimizations like in-lining, factorizing and peepholing, which can reduce ..
STX-RLINK ,In-circuit debugger/programmer for STM8, ST7, STM32, STR7 and STR9 microcontrollersFeatures, the Description, the Architecture and the Ride7 integrated development environment.Update ..
STY112N65M5 ,N-channel 650 V, 0.019 Ohm, 96 A, MDmesh(TM) V Power MOSFET in Max247Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STY30NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTY30NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) ..
STY30NK90Z ,N-CHANNEL 900VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 900 VDS GSV Drain ..
STY34NB50 ,N- CHANNEL 500 VSTY34NB50®N - CHANNEL 500V - 0.11Ω - 34 A - Max247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTY34NB50 ..
STD35N3LH5
N-channel 30 V, 14 mOhm;, 35 A, DPAK STripFET(TM); V Power MOSFET
May 2011 Doc ID 16359 Rev 2 1/15
STD35N3LH5N-channel 30 V , 12.5 mΩ , 35 A, DP AK ripFET™ V Power MOSFET
Features 100% avalanche tested Surface mounting DPAK (TO-252) Low gate drive power losses
Applications Switching applications Automotive
DescriptionThe STD35N3LH5 is a N-channel STripFET™ V.
This Power MOSFET technology is among the
latest improvements, which have been especially
tailored to achieve very low on-state resistance
providing also one of the best-in-class figure of
merit (FOM).
Table 1. Device summary
Contents STD35N3LH52/15 Doc ID 16359 Rev 2
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STD35N3LH5 Electrical ratings
Doc ID 16359 Rev 2 3/15
1 Electrical ratings
Table 2. Absolute maximum ratings The value is rated according Rthj-c Pulse is rated according safe operating area
Table 3. Thermal resistance When mounted on 1inch² FR-4 2Oz Cu board
Table 4. Avalanche data
Electrical characteristics STD35N3LH5
4/15 Doc ID 16359 Rev 2
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. Static
Table 6. Dynamic
STD35N3LH5 Electrical characteristics
Doc ID 16359 Rev 2 5/15
Table 7. Switching on/off (inductive load)
Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%
