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Partno	Mfg	Dc	Qty	Available	Descript
STD30PF03LT4	STM	N/a	10000	avai	P-CHANNEL 30V
STD30PF03LT4	ST	N/a	1420	avai	P-CHANNEL 30V
STD30PF03LT4	ST,ST	N/a	12500	avai	P-CHANNEL 30V
STD30PF03L-T4 \|STD30PF03LT4	ST	N/a	2500	avai	P-CHANNEL 30V

STD30PF03LT4 ,P-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STD30PF03LT4 ,P-CHANNEL 30VSTD30PF03LP-CHANNEL 30V - 0.025 Ω - 24A IPAK/DPAKSTripFET™ II POWER MOSFETTYPE V R IDSS DS(on) DSTD ..
STD30PF03LT4 ,P-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)30 VDS GSV Drain-g ..
STD30PF03L-T4 ,P-CHANNEL 30VAPPLICATIONS■ DC-DC CONVERTERSOrdering InformationSALES TYPE MARKING PACKAGE PACKAGINGSTD30PF03LT4D ..
STD35N3LH5 ,N-channel 30 V, 14 mOhm;, 35 A, DPAK STripFET(TM); V Power MOSFETElectrical characteristics(T = 25 °C unless otherwise specified)CASETable 5. StaticSymbol Parameter ..
STD35NF06 ,N-CHANNEL 60V 0.018 OHM 55AABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STX724 , NPN MEDIUM POWER TRANSISTORS
STX-RLINK ,In-circuit debugger/programmer for STM8, ST7, STM32, STR7 and STR9 microcontrollersapplications code using optimizations like in-lining, factorizing and peepholing, which can reduce ..
STX-RLINK ,In-circuit debugger/programmer for STM8, ST7, STM32, STR7 and STR9 microcontrollersFeatures, the Description, the Architecture and the Ride7 integrated development environment.Update ..
STY112N65M5 ,N-channel 650 V, 0.019 Ohm, 96 A, MDmesh(TM) V Power MOSFET in Max247Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STY30NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTY30NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) ..
STY30NK90Z ,N-CHANNEL 900VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 900 VDS GSV Drain ..

STD30PF03LT4-STD30PF03L-T4
P-CHANNEL 30V
1/10May 2003
STD30PF03L
P-CHANNEL 30V - 0.025 Ω - 24A IPAK/DPAK
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.025Ω STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY LOW TRESHOLD DEVICE LOW GATE CHARGE THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This MOSFET is the latest development of
STMicroelectronics unique “Single Feature Size™” strip-
based process The resulting transistor shows extremely
high packing density for low on-resistance and low gate
charge.
APPLICATIONS DC-DC CONVERTERS
Ordering Information
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area.
(#) Current limited by wire bonding
(1) Starting Tj = 25 oC, ID =12 A, VDD = 15V
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
INTERNAL SCHEMATIC DIAGRAM
STD30PF03L
THERMAL DATA
(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
ON (*)
DYNAMIC
3/10
STD30PF03L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STD30PF03L
Output Characteristics Transfer Characteristics
5/10
STD30PF03L
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

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