STD30PF03L ,P-CHANNEL 30V 0.025 OHM 24A DPAK/IPAK STRIPFET II POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STD30PF03L-1 ,P-CHANNEL 30V 0.025 OHM 24A DPAK/IPAK STRIPFET II POWER MOSFETSTD30PF03LSTD30PF03L-1P-CHANNEL 30V - 0.025Ω - 24A DPAK/IPAKSTripFET™ II POWER MOSFETPRELIMINARY DA ..
STD30PF03L-1 ,P-CHANNEL 30V 0.025 OHM 24A DPAK/IPAK STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD30PF03L-1 ,P-CHANNEL 30V 0.025 OHM 24A DPAK/IPAK STRIPFET II POWER MOSFETFeatureSize™” strip-based process. The resulting transis-tor shows extremely high packing density f ..
STD30PF03LT4 ,P-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STD30PF03LT4 ,P-CHANNEL 30VSTD30PF03LP-CHANNEL 30V - 0.025 Ω - 24A IPAK/DPAKSTripFET™ II POWER MOSFETTYPE V R IDSS DS(on) DSTD ..
STX724 , NPN MEDIUM POWER TRANSISTORS
STX-RLINK ,In-circuit debugger/programmer for STM8, ST7, STM32, STR7 and STR9 microcontrollersapplications code using optimizations like in-lining, factorizing and peepholing, which can reduce ..
STX-RLINK ,In-circuit debugger/programmer for STM8, ST7, STM32, STR7 and STR9 microcontrollersFeatures, the Description, the Architecture and the Ride7 integrated development environment.Update ..
STY112N65M5 ,N-channel 650 V, 0.019 Ohm, 96 A, MDmesh(TM) V Power MOSFET in Max247Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STY30NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTY30NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) ..
STY30NK90Z ,N-CHANNEL 900VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 900 VDS GSV Drain ..
STD30PF03L-STD30PF03L-1
P-CHANNEL 30V 0.025 OHM 24A DPAK/IPAK STRIPFET II POWER MOSFET
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PRELIMINARY DATAMay 2002
STD30PF03L
STD30PF03L-1P-CHANNEL 30V - 0.025Ω - 24A DPAK/IPAK
STripFET™ II POWER MOSFET
Note:For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed TYPICAL RDS(on) = 0.025Ω STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE LOW GATE CHARGE EXTREMELY LOW FIGURE OF MERIT
(RDS(on) * Qg)
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting transis-
tor shows extremely high packing density for low
on-resistance and low gate charge.
APPLICATIONS DC-DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
(#) Current limited by wire bonding
STD30PF03L - STD30PF03L-1
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
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STD30PF03L - STD30PF03L-1
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
STD30PF03L - STD30PF03L-1
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
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STD30PF03L - STD30PF03L-1
STD30PF03L - STD30PF03L-1
