STD30NF06LT4 ,N-CHANNEL 60V 0.022 OHM 35A DPAK / IPAK STRIPFET II POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STD30NF06L-T4 ,N-CHANNEL 60V 0.022 OHM 35A DPAK / IPAK STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD30NF06T4 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STD30NF06-T4 ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STD30PF03L ,P-CHANNEL 30V 0.025 OHM 24A DPAK/IPAK STRIPFET II POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STD30PF03L-1 ,P-CHANNEL 30V 0.025 OHM 24A DPAK/IPAK STRIPFET II POWER MOSFETSTD30PF03LSTD30PF03L-1P-CHANNEL 30V - 0.025Ω - 24A DPAK/IPAKSTripFET™ II POWER MOSFETPRELIMINARY DA ..
STX724 , NPN MEDIUM POWER TRANSISTORS
STX-RLINK ,In-circuit debugger/programmer for STM8, ST7, STM32, STR7 and STR9 microcontrollersapplications code using optimizations like in-lining, factorizing and peepholing, which can reduce ..
STX-RLINK ,In-circuit debugger/programmer for STM8, ST7, STM32, STR7 and STR9 microcontrollersFeatures, the Description, the Architecture and the Ride7 integrated development environment.Update ..
STY112N65M5 ,N-channel 650 V, 0.019 Ohm, 96 A, MDmesh(TM) V Power MOSFET in Max247Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STY30NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTY30NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) ..
STY30NK90Z ,N-CHANNEL 900VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 900 VDS GSV Drain ..
STD30NF06LT4-STD30NF06L-T4
N-CHANNEL 60V 0.022 OHM 35A DPAK / IPAK STRIPFET II POWER MOSFET
1/10July 2002
STD30NF06LN-CHANNEL 60V - 0.022Ω - 35A DPAK/IPAK
STripFET™ POWER MOSFET
(1) ISD ≤38A, di/dt ≤400A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. TYPICAL RDS(on) = 0.022Ω EXCEPTIONAL dv/dt CAPABILITY LOGIC LEVEL GATE DRIVE ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL ADD SUFFIX “-1” FOR ORDERING IN IPAK CHARACTERIZATION ORIENTED FOR
AUTOMOTIVE APPLICATIONS
DESCRIPTIONThis Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
STD30NF06L
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/10
STD30NF06L
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Normalized Thermal ImpedenceSafe Operating Area
STD30NF06L
Output Characteristics
Gate Charge vs Gate-source Voltage
Transconductance Static Drain-source On Resistance
Transfer Characteristics
5/10
STD30NF06L
Normalized Gate Threshold Voltage vs
Temperature
Normalized Drain-Source Breakdown vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STD30NF06L
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
