STD30NE06L ,N-CHANNEL 60VSTD30NE06L®N - CHANNEL 60V - 0.025 Ω - 30A TO-252STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTD ..
STD30NE06LT4 ,N-CHANNEL 60VSTD30NE06L®N - CHANNEL 60V - 0.025 Ω - 30A TO-252STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTD ..
STD30NE06L-T4 ,N-CHANNEL 60VFeatureSize™ " strip-based process. The resulting transi-stor shows extremely high packing density ..
STD30NF03L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STD30NF03LT4 ,N-CHANNEL 30VSTD30NF03LN-CHANNEL 30V - 0.020 Ω - 30A IPAK/DPAKSTripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTD30N ..
STD30NF03L-T4 ,N-CHANNEL 30VAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ SOLENOID AND RELAY DRIVERS■ MOTOR CONTROL, AUDIO ..
STX13003 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSTX13003®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ ST13003 SILICON IN TO-92 PACKAGE■ MEDIUM ..
STX13005 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Emitter Voltage (V =0) 700 VCES BEV ..
STX724 , NPN MEDIUM POWER TRANSISTORS
STX-RLINK ,In-circuit debugger/programmer for STM8, ST7, STM32, STR7 and STR9 microcontrollersapplications code using optimizations like in-lining, factorizing and peepholing, which can reduce ..
STX-RLINK ,In-circuit debugger/programmer for STM8, ST7, STM32, STR7 and STR9 microcontrollersFeatures, the Description, the Architecture and the Ride7 integrated development environment.Update ..
STY112N65M5 ,N-channel 650 V, 0.019 Ohm, 96 A, MDmesh(TM) V Power MOSFET in Max247Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STD30NE06L
N-CHANNEL 60V
STD30NE06LN - CHANNEL 60V - 0.025 Ω - 30A TO-252
STripFET POWER MOSFET TYPICAL RDS(on) = 0.025 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100oC APPLICATION ORIENTED
CHARACTERIZATION ADD SUFFIX "T4" FOR ORDERING IN TAPE
& REEL
DESCRIPTION This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size" strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS
May 1999
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area (1) ISD ≤30A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STD30NE06L2/8
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STD30NE06L3/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STD30NE06L4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STD30NE06L5/8
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits ForResistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load SwitchingAnd Diode Recovery Times
STD30NE06L6/8
