STQ2NK60ZR-AP ,N-CHANNEL 600VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
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STD2NK60Z-1-STF2NK60Z-STP2NK60Z-STQ2NK60ZR-AP
N-CHANNEL 600V
1/15November 2004
STF2NK60Z - STQ2NK60ZR-AP
STP2NK60Z - STD2NK60Z-1N-CHANNEL 600V - 7.2Ω - 1.4A TO-220/TO-220FP/TO-92/IPAK
Zener-Protected SuperMESH™ MOSFET
Rev. 4
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-12/15
Table 3: Absolute Maximum ratings ) Pulse width limited by safe operating area
(1) ISD ≤ 1.4A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Table 8: Dynamic
Table 9: Source Drain Diode(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-14/15
Figure 3: .Safe Operating Area For TO-220
Figure 4: Safe Operating Area For IPAK
Figure 5: Safe Operating Area For TO-92
Figure 6: Thermal Impedance For TO-220
Figure 7: Thermal Impedance For IPAK
Figure 8: Thermal Impedance For TO-92
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STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Figure 9: Safe Operating Area For TO-220FP
Figure 10: Output Characteristics
Figure 11: Transconductance
Figure 12: Thermal Impedance For TO-220FP
Figure 13: Transfer Characteristics
Figure 14: Gate Charge vs Gate-source Voltage
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-16/15
Figure 15: Static Drain-source On Resistance
Figure 16: Capacitance Variations
Figure 17: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 18: Source-Drain Forward Characteris-
tics
Temperature
Figure 20: Normalized On Resistance vs Tem-
perature
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STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Figure 21: Normalized BVDSS vs Temperature
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-18/15
Figure 22: Switching Times Test Circuit For
Resistive Load
Figure 23: Test Circuit For Inductive Load
Switching and Diode Recovery Times
Figure 24: Gate Charge Test Circuit
