STD2NB40 ,NSTD2NB40®N - CHANNEL 400V - 3.5Ω - 2A - IPAK/DPAKPowerMESH™ MOSFET PRELIMINARY DATATYPE VDSS RDS(on ..
STD2NB50T4 ,N-CHANNEL 500V 5 OHM 1A DPAK/IPAK POWERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STD2NB60T4 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTD2NB60N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTD2NB60 600 V < 3.6 Ω ..
STD2NB60-T4 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTD2NB60N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTD2NB60 600 V < 3.6 Ω ..
STD2NB80 ,N-CHANNEL 800V
STD2NB80T4 ,N-CHANNEL 800V
STW7NK90Z ,N-CHANNEL 900VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2TO220FPTO-220/D PAK/TO247V Drain-source Voltage ..
STW80NE06-10 ,N-CHANNEL 60V 0.0085 OHM 80A TO-247 STRIPFET POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STW80NF55-08 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 55 VDS GSV Drain- ..
STW80NF55-08 ,N-CHANNEL 55VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STW81101 ,Multi-band RF frequency synthesizer with integrated VCOsApplications– 950 - 1100 MHz (internal divider by 4)■ 2.5G and 3G cellular infrastructure equipment ..
STW81101AT ,Multi-band RF frequency synthesizer with integrated VCOsfeatures . . . . 272/53 STW81101 Contents6.1.1 Data validity . . . . . . 276.1.2 START a ..
STD2NB40
N
STD2NB40N - CHANNEL 400V - 3.5Ω - 2A - IPAK/DPAK
PowerMESH MOSFET
PRELIMINARY DATA TYPICAL RDS(on) = 3.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ADD SUFFIX "T4" FOR ORDERING IN TAPE
& REEL
DESCRIPTION Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
July 1999
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area (1) ISD ≤2A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/6
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STD2NB402/6
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
STD2NB403/6
STD2NB404/6
STD2NB405/6
. consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
http://
STD2NB406/6
