STD2N50 Fast Delivery |IC PHOENIX CO.,LIMITED

STD2N50 ,N-CHANNEL MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSVDG R D ..
STD2NA50 ,N-CHANNEL MOSFETSTD2NA50N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTD2N ..
STD2NA50-T4 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTD2NA50N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTD2N ..
STD2NB25 ,N-CHANNEL 250VSTD2NB25®N - CHANNEL 250V - 1.7Ω - 2A - IPAK/DPAKPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTD2NB25 2 ..
STD2NB25T4 ,N-CHANNEL 250VSTD2NB25®N - CHANNEL 250V - 1.7Ω - 2A - IPAK/DPAKPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTD2NB25 2 ..
STD2NB40 ,NSTD2NB40®N - CHANNEL 400V - 3.5Ω - 2A - IPAK/DPAKPowerMESH™ MOSFET PRELIMINARY DATATYPE VDSS RDS(on ..
STW75NF30 ,N-channel 300 V, 0.037 惟, 60 A, TO-247 low gate charge STripFET蛺2;2; Power MOSFETElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. On/off statesSymbol Para ..
STW77N65M5 ,N-channel 650 V, 0.033 Ohm, 69 A, MDmesh(TM) V Power MOSFET TO-247Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STW7N95K3 ,N-channel 950 V, 1.1 Ohm, 7.2 A, TO-247, Zener-protected SuperMESH3; Power MOSFETElectrical characteristics(Tcase = 25 °C unless otherwise specified)Table 4. On /off statesSymbol P ..
STW7NA100 ,Trans MOSFET N-CH 1KV 7A 3-Pin(3+Tab) TO-247STW7NA100STH7NA100FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DSTW7NA10 ..
STW7NA80 ,Trans MOSFET N-CH 800V 6.5A 3-Pin(3+Tab) TO-247ABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTW7NA80 STH7NA80FIV Drain-source Voltage (V = 0 ..
STW7NB80 ,N-CHANNEL 800VSTW7NB80®N-CHANNEL 800V - 1.6Ω - 6.5A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW7NB80 80 ..

STD2N50
N-CHANNEL MOSFET
STD2N50- CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR TYPICAL RDS(on)= 4.5Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED
CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER
PACKAGEIN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGEIN TAPE& REEL
(SUFFIX ”T4”)
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWERSUPPLIES (SMPS) CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
TYPE VDSS RDS(on) ID
STD2N50 500V < 5.5Ω 2A
December 1996
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS=0) 500 V
VDGR Drain- gate Voltage (RGS =20 kΩ) 500 V
VGS Gate-source Voltage ±20 V Drain Current (continuous)atTc =25o C2 A Drain Current (continuous)atTc =100o C1.25 A
IDM(•) Drain Current (pulsed) 8 A
Ptot Total DissipationatTc =25o C45 W
Derating Factor 0.36 W/oC
Tstg Storage Temperature -65to 150 oC Max. Operating Junction Temperature 150 oC
(•) Pulsewidth limitedby safe operatingarea
IPAK
TO-251
(Suffix ”-1”)
DPAK
TO-252
(Suffix ”T4”)
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THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
275 C/W C/W C/WC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitiveor Not-Repetitive
(pulse width limitedbyTj max, δ <1%)
EAS Single Pulse Avalanche Energy
(startingTj =25oC,ID =IAR,VDD =50V) mJ
EAR Repetitive Avalanche Energy
(pulse width limitedbyTj max, δ <1%)
1.5 mJ
IAR Avalanche Current, Repetitiveor Not-Repetitive
(Tc= 100oC, pulse width limitedbyTj max, δ <1%)
1.2 A
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage =250 μAVGS=0 500 V
IDSS Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS= Max Ratingx 0.8 Tc =125oC
IGSS Gate-body Leakage
Current (VDS =0)
VGS= ± 20V ± 100 nA (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS =VGS ID =250 μA2 3 4 V
RDS(on) Static Drain-source On
Resistance
VGS =10V ID =1A 4.5 5.5 Ω
ID(on) On State Drain Current VDS >ID(on) xRDS(on)max
VGS =10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance
VDS >ID(on) xRDS(on)max ID =1A 0.65 1 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS= 25Vf= 1MHz VGS =0 200
STD2N50
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
Turn-on Time
Rise Time
VDD =200V ID =1A =50 Ω VGS =10V
(see test circuit, figure3)
(di/dt)on Turn-on Current Slope VDD =400V ID =2A =50 Ω VGS =10V
(see test circuit, figure5) A/μs
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 400V ID =2A VGS =10V 18 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD =400V ID =2A =50 Ω VGS =10V
(see test circuit, figure5)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD(∗) Forward On Voltage ISD =2A VGS =0 1.5 V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD =2A di/dt =100 A/μs
VDD= 100V Tj =150oC
(see test circuit, figure5)
(∗) Pulsed: Pulse duration=300μs, duty cycle 1.5%
(•) Pulse width limitedby safe operating area
Safe Operating Area Thermal Impedance
STD2N50
3/10
Derating Curve
Transfer Characteristics
Static Drain-source On Resistance
Output Characteristics
Transconductance
Gate Chargevs Gate-source Voltage
STD2N50
4/10
Capacitance Variations Normalized Gate Threshold Voltagevs
Temperature
Normalized On Resistancevs Temperature Turn-on Current Slope
Cross-over TimeTurn-off Drain-source Voltage Slope
STD2N50
5/10
Switching Safe Operating Area Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig.1: Unclamped Inductive Load Test Circuits Fig.2: Unclamped Inductive Waveforms
STD2N50
6/10

Partno	Mfg	Dc	Qty	Available	Descript
STD2N50	ST	N/a	3350	avai	N-CHANNEL MOSFET