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Partno	Mfg	Dc	Qty	Available	Descript
STD2HNK60Z	ST	N/a	1694	avai	N-channel 600 V, 4.4 Ohm, 2 A Zener-protected SuperMESH(TM) Power MOSFET in DPAK package

STD2HNK60Z ,N-channel 600 V, 4.4 Ohm, 2 A Zener-protected SuperMESH(TM) Power MOSFET in DPAK packageElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 5. On/off statesSymbol P ..
STD2HNK60-Z-1 ,N-CHANNEL 600VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STD2HNK60Z-1 ,N-CHANNEL 600VAPPLICATIONS

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STD2HNK60Z
N-channel 600 V, 4.4 Ohm, 2 A Zener-protected SuperMESH(TM) Power MOSFET in DPAK package
May 2012 Doc ID 10067 Rev 5 1/22
STD2HNK60Z, STD2HNK60Z-1
STF2HNK60Z, STD2HNK60Z-AP
N-channel 600 V , 4.4 Ω , 2 A Zener-protected SuperMESH™
Power MOSFET in TO-92-TO-220FP-DP AK-IP AK packages
Datasheet — production data
Features Gate charge minimized 100% avalanche tested Extremely high dv/dt capability ESD improved capability New high voltage benchmark
Applications Switching applications
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.

Table 1. Device summary
Contents STD2HNK60Z, STD2HNK60Z-1, STF2HNK60Z, STD2HNK60Z-AP
2/22 Doc ID 10067 Rev 5
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
STD2HNK60Z, STD2HNK60Z-1, STF2HNK60Z, STD2HNK60Z-AP Electrical ratings
Doc ID 10067 Rev 5 3/22
1 Electrical ratings
Table 2. Absolute maximum ratings Pulse width limited by safe operating area. ISD ≤ 2 A, di/dt ≤ 200 A/µs, VDD =80%V(BR)DSS.
Table 3. Thermal data
Table 4. Avalanche data
Electrical characteristics STD2HNK60Z, STD2HNK60Z-1, STF2HNK60Z, STD2HNK60Z-AP
4/22 Doc ID 10067 Rev 5
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Table 6. Dynamic Pulsed: pulse duration=300µs, duty cycle 1.5% Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
STD2HNK60Z, STD2HNK60Z-1, STF2HNK60Z, STD2HNK60Z-AP Electrical characteristics
Doc ID 10067 Rev 5 5/22
Table 7. Switching times
Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration=300µs, duty cycle 1.5%