STD25NF10LT4 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)100 VDS GSV Drain- ..
STD25NF10T4 ,N-CHANNEL 100V 0.033 OHM 25A DPAK LOW GATE CHARGE STRIPFET POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 100 VDS GSV Drain ..
STD29NF03L ,NELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STD29NF03LT4 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STD29NF03L-T4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STD2HNK60Z ,N-channel 600 V, 4.4 Ohm, 2 A Zener-protected SuperMESH(TM) Power MOSFET in DPAK packageElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 5. On/off statesSymbol P ..
STW50NB20 ,NSTW50NB20®N - CHANNEL 200V - 0.047Ω - 50A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTW50NB2 ..
STW52NK25Z ,N-CHANNEL 250V-0.033Ohm-52A TO-247 Zener-Protected SuperMESH™MOSFETFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTW52NK25Z 250 V < 0.045 Ω 52 A 300 W
STD25NF10LT4
N-CHANNEL 100V
1/9February 2003
STD25NF10LN-CHANNEL 100V - 0.030 Ω - 25A DPAK
LOW GATE CHARGE STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.030 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DEVICE LOGIC LEVEL DEVICE SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTIONThis MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements
APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.
(*) Current Limited by Package
(1) ISD ≤25A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 12.5A, VDD = 50V
INTERNAL SCHEMATIC DIAGRAM
STD25NF10L
THERMAL DATA(#) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu.
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF
ON (*)
DYNAMIC
3/9
STD25NF10L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)Safe Operating Area
STD25NF10LOutput Characteristics Transfer Characteristics
5/9
STD25NF10LNormalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test CircuitAnd Diode Recovery Times
