STD20NE03L ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTD20NE03LN - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE™ " POWER MOSFETTYPE V R IDSS DS(on) DST ..
STD20NE06 ,NSTD20NE06N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE™ " POWER MOSFETTYPE V R IDSS DS(on) DSTD ..
STD20NF06L ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STD20NF06L-1 ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD20NF06LT4 ,N-CHANNEL 60VSTD20NF06LN-CHANNEL 60V - 0.032 Ω - 24A DPAKSTripFET™ II POWER MOSFETPRELIMINARY DATATYPE V R IDSS ..
STD20NF06L-T4 ,N-CHANNEL 60VAPPLICATIONS■ POWER TOOLS■ AUTOMOTIVE ENVIRONMENTOrdering InformationSALES TYPE MARKING PACKAGE PAC ..
STW45NM60 ,N-CHANNEL 600V 0.09 OHM 45A TO-247 MDMESH POWER MOSFETSTW45NM60N-CHANNEL 600V - 0.09Ω - 45A TO-247MDmesh™Power MOSFETTYPE V R IDSS DS(on) DSTW45NM60 600V ..
STW47NM50 ,N-CHANNEL 500 VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STW4810CHDR/LF , Power management for multimedia processors
STW48NM60N ,N-channel 600 V, 0.055 Ohm typ., 44 A MDmesh(TM) II Power MOSFET in TO-247 packageElectrical characteristics(T = 25 °C unless otherwise specified).CASETable 4. On/off statesSymbol P ..
STW5093CYL ,2.7V SUPPLY 14-BIT LINEAR CODEC WITH HIGH-PERFORMANCE AUDIO FRONT-ENDBLOCK DIAGRAMREMINMIC PREAMP REN,RLM,ROI,RDL REMOCONMIC AMP0/20dBMIC3- REMOUT0 -> 22.5+ MUTE1.5dB S ..
STW5093CYLT ,2.7V SUPPLY 14-BIT LINEAR CODEC WITH HIGH-PERFORMANCE AUDIO FRONT-ENDFUNCTIONAL DESCRIPTION1.1 DEVICE OPERATION1.1.1 Power on initialization:When power is first applied ..
STD20NE03L
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STD20NE03LN - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZE " POWER MOSFET TYPICAL RDS(on) = 0.016 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE A 100 oC APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTIONThis Power MOSFET is the latest development of
SGS-THOMSON unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
December 1997
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area (1) ISD ≤ 40 A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(**) Value limited only by the package
1/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STD20NE03L2/9
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STD20NE03L3/9
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STD20NE03L4/9
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STD20NE03L5/9
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits ForResistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load SwitchingAnd Diode Recovery Times
STD20NE03L6/9
