STD1NK80ZT4 ,N-CHANNEL 800VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STD20N20 ,N-CHANNEL 200V 0.10 Ohm 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STRIPFET II MOSFETFeatures Figure 1: PackageTYPE V R I PDSS DS(on) d TOTSTD20N20 200 V < 0.125 Ω 18 A 90 WSTF20N20 20 ..
STD20N20T4 ,N-CHANNEL 200V 0.10 Ohm 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STRIPFET II MOSFETELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 6: On/OffSymbol Parameter ..
STD20NE03L ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTD20NE03LN - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE™ " POWER MOSFETTYPE V R IDSS DS(on) DST ..
STD20NE06 ,NSTD20NE06N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE™ " POWER MOSFETTYPE V R IDSS DS(on) DSTD ..
STD20NF06L ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
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STW45NM50 ,N-CHANNEL 500VSTW45NM50N-CHANNEL 500V - 0.08Ω - 45A TO-247MDmesh™Power MOSFETTYPE V R IDSS DS(on) DSTW45NM50 500V ..
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STW4810CHDR/LF , Power management for multimedia processors
STD1NK80Z-STD1NK80ZT4-STN1NK80Z
N-CHANNEL 800V
1/15January 2006
STQ1NK80ZR-AP - STN1NK80Z
STD1NK80Z - STD1NK80Z-1N-CHANNEL 800V - 13 Ω - 1 A TO-92 /SOT-223/DPAK/IPAK
Zener - Protected SuperMESH™ MOSFET
Rev. 3
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Table 3: Absolute Maximum ratings ) Pulse width limited by safe operating area
(1) ISD ≤ 1 A, di/dt ≤ 200 A/µs, V DD ≤ 640
Table 4: Thermal Data(#) When mounted on 1inch² FR-4 BOARD, 2 oz Cu
Table 5: Avalanche Characteristics
Table 6: GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
3/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Table 8: Dynamic
Table 9: Source Drain DiodeNote:1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. Pulse width limited by safe operating area. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Figure 3: Safe Operating Area for SOT-223
Figure 4: Safe Operating Area for TO-92
Figure 5: Safe Operating Area for IPAK-DPAK
Figure 6: Thermal Impedance for SOT-223
5/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Figure 9: Output Characteristics
Figure 10: Transconductance
Figure 11: Gate Charge vs Gate-source Voltage
Figure 12: Transfer Characteristics
Figure 14: Capacitance Variations
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Figure 15: Normalized Gate Thereshold Volt-
age vs Temperature
acteristics
Figure 17: Avalanche Energy vs Starting Tj
Figure 18: Normalized On Resistance vs Tem-
perature
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STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Figure 20: Unclamped Inductive Load Test Cir-
cuit
Figure 22: Test Circuit For Inductive Load
Switching and Diode Recovery Times
Figure 23: Unclamped Inductive Wafeform
Figure 24: Gate Charge Test Circuit
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at:
