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STQ1HNK60RSTN/a9290avaiN-CHANNEL 600V
STQ1HNK60R-AP |STQ1HNK60RAPSTN/a63980avaiN-CHANNEL 600V
STD1NK60STN/a216avaiN-CHANNEL 600V
STD1NK60-1 |STD1NK601STN/a100avaiN-CHANNEL 600V
STD1NK60T4ST,STN/a10000avaiN-CHANNEL 600V
STN1HNK60STN/a27avaiN-CHANNEL 600V


STQ1HNK60R-AP ,N-CHANNEL 600VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTD1NK60 600 V < 8.5 Ω 1 A 30 WSTD1NK60-1 600 V ..
STQ1NC45 ,N-CHANNEL 450VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTD2NC45-1 STQ1NC45V Drain-source Voltage (V =0) ..
STQ1NC45R ,N-CHANNEL 450V 4.1OHM 1.5A IPAK/TO-92 SUPERMESH POWER MOSFET
STQ1NC45R-AP ,N-CHANNEL 450V 4.1OHM 1.5A DPAK/IPAK/TO-92 SUPERMESH POWER MOSFET
STQ1NE10L-AP ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)100 VDS GSV Drain- ..
STQ1NK60ZR ,N-CHANNEL 600VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTQ1NK60ZR 600 V < 15 Ω 0.3 A 3 WSTD1LNK60Z-1 60 ..
T14L1024N , 128K X 8 HIGH SPEED CMOS STATIC RAM
T14L1024N , 128K X 8 HIGH SPEED CMOS STATIC RAM
T14M256A , 32K X 8 HIGH SPEED CMOS STATIC RAM  
T14M256A-8J , 32K X 8 HIGH SPEED CMOS STATIC RAM  
T15M256A , 32K X 8 LOW POWER CMOS STATIC RAM   
T15M256A , 32K X 8 LOW POWER CMOS STATIC RAM   


STD1NK60-STD1NK60-1-STD1NK60T4-STN1HNK60-STQ1HNK60R-STQ1HNK60R-AP
N-CHANNEL 600V
1/15November 2004
STD1NK60 - STD1NK60-1
STQ1HNK60R - STN1HNK60

N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223
SuperMESH™ MOSFET
Rev. 2
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
2/15
Table 3: Absolute Maximum ratings
) Pulse width limited by safe operating area
(1) ISD ≤1.0A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
Table 4: Thermal Data

(#) When mounted on FR-4 board of 1 in2 , 2oz Cu, t < 10 sec
Table 5: Avalanche Characteristics
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
3/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Source Drain Diode

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
4/15
Figure 3: .Safe Operating Area For SOT-223
Figure 4: Safe Operating Area For DPAK/IPAK
Figure 5: Safe Operating Area For TO-92
Figure 6: Thermal Impedance For SOT-223
Figure 7: Thermal Impedance For DPAK/IPAK
Figure 8: Thermal Impedance For TO-92
5/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
Figure 9: Output Characteristics
Figure 10: Transconductance
Figure 11: Capacitance Variations
Figure 12: Transfer Characteristics
Figure 13: Gate Charge vs Gate-source Voltage
Figure 14: Static Drain-source On Resistance
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
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Figure 15: Normalized Gate Thereshold Volt-
age vs Temperature
tics
Figure 17: Maximum Avalanche Energy vs
Temperature
Figure 18: Normalized On Resistance vs Tem-
perature
Figure 20: Max Id Current vs Tc
7/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
Figure 21: Switching Times Test Circuit For
Resistive Load
Figure 22: Test Circuit For Inductive Load
Switching and Diode Recovery Times
Figure 23: Gate Charge Test Circuit

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
8/15
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