STD1NC70Z-1 ,N-CHANNEL 700V 7.3 OHM 1.4A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED POWERMESH III MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTD1NC70ZSTP2NC70Z STP2NC70ZFPSTD1NC70Z-1V Drain ..
STD1NK60 ,N-CHANNEL 600VAPPLICATIONS
STD1NC70Z-1
N-CHANNEL 700V 7.3 OHM 1.4A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED POWERMESH III MOSFET
1/13February 2002
STP2NC70Z, STP2NC70ZFP
STD1NC70Z, STD1NC70Z-1N-CHANNEL 700V - 7.3Ω - 1.4A TO-220/FP/DPAK/IPAK
Zener-Protected PowerMESH™III MOSFET TYPICAL RDS(on) = 7.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES
DESCRIPTIONThe third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications..
APPLICATIONS SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION WELDING EQUIPMENT
ORDERING INFORMATION
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-12/13
ABSOLUTE MAXIMUM RATINGS ) Pulse width limited by safe operating area
(1) ISD ≤10A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODENote: 3. ΔVBV = αT (25°-T) BVGSO(25°)
(#) When mounted on minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
3/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-14/13
Safe Operating Area For TO-220FP
Safe Operating Area For TO-220 Thermal Impedance For TO-220
Thermal Impedance For TO-220FP
Safe Operating Area For DPAK/IPAK Thermal Impedance For DPAK/IPAK
5/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
Gate Charge vs Gate-source Voltage Capacitance Variations
Output Characteristics
Transconductance
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-16/13
Normalized BVDSS vs Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Gate Threshold Voltage vs Temp.
7/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
