STD1NC60 ,N-CHANNEL 600V 7 OHM 1.4A DPAK/IPAK POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)600 VDS GSV Drain- ..
STD1NC60-1 ,N-CHANNEL 600V 7 OHM 1.4A DPAK/IPAK POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)600 VDS GSV Drain- ..
STD1NC60-T4 ,N-CHANNEL 600V 7 OHM 1.4A DPAK/IPAK POWERMESH II MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD1NC70Z-1 ,N-CHANNEL 700V 7.3 OHM 1.4A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED POWERMESH III MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTD1NC70ZSTP2NC70Z STP2NC70ZFPSTD1NC70Z-1V Drain ..
STD1NK60 ,N-CHANNEL 600VAPPLICATIONS
STD1NC60
N-CHANNEL 600V 7 OHM 1.4A DPAK/IPAK POWERMESH II MOSFET
1/9December 2000
STD1NC60N-CHANNEL 600V - 7Ω - 1.4A - DPAK/IPAK
PowerMesh™II MOSFET TYPICAL RDS(on) = 7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTIONThe PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD ≤1.4A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
STD1NC60
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STD1NC60
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal ImpedanceSafe Operating Area
STD1NC60
Transconductance
Gate Charge vs Gate-source Voltage Capacitance Variations
Static Drain-source On Resistance
Output Characteristics Transfer Characteristics
5/9
STD1NC60
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
STD1NC60
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
